TIN OXIDE (SnO) → Indium oxide tin oxide samarium oxide

HRID 1628360

Reaction equation

[O-2:1].[In+3:2].[O-2].[O-2].[In+3].[Sn:6]=O.[O-2].[Sm+3:9].[O-2].[O-2].[Sm+3]>>[O-2:1].[In+3:2].[O-2:1].[O-2:1].[In+3:2].[Sn:6]=[O:1].[O-2:1].[Sm+3:9].[O-2:1].[O-2:1].[Sm+3:9]

Participants

Reactant 3

HCID 88989TIN OXIDE (SnO)

HCID 150905Indium oxide

HCID 159425Samarium oxide (Sm2O3)

Product 1

HCID 131731696Indium oxide tin oxide samarium oxide

Procedure

Except that a target containing indium oxide, tin oxide and samarium oxide (molar ratio of In:Sn:Sm=60:35:5) was used, indium oxide-tin oxide-samarium oxide (ITSmO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.

Sources & evidence

ORD record: ord-81a39c1c4e824f9d9f495535bec906fa
Source dataset: uspto-grants-2014_07
DOI: 10.6084/m9.figshare.5104873.v1
Patent number: US08785920B2

Linked notes

Loading…