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Tetrahydrofuran → Chloropropyldimethylvinylsilane

HRID 217564
Notes
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Reaction equation

HRID 217564 reaction equation
[Cl:1][CH2:2][CH2:3][CH2:4][Si:5](Cl)([CH3:7])C.C([Mg]Cl)=C.[CH2:13]1[CH2:17]OC[CH2:14]1>>[Cl:1][CH2:2][CH2:3][CH2:4][SiH2:5][CH:7]=[C:13]([CH3:17])[CH3:14]
ParticipantsProcedureWorkupSources & evidenceReaction notes

Participants

4

Reactant 3

HCID 8028TetrahydrofuranHCID 82765Silane, chloro(3-chloropropyl)dimethyl-HCID 178461836HCID 178461836, compound

Product 1

HCID 131715857ChloropropyldimethylvinylsilaneYield 96%

Procedure

The above-synthesized 3-chloropropylchlorodimethylsilane (1) (15.6 g, 91.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (85.6 mL, 137 mmol) was slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with aqueous NH4Cl solution and ether, and the organic layer was washed with aqueous saturated NaCl solution. The washed organic solution was dried with anhydrous MgSO4, and then filtered through celite to remove MgSO4. After evaporating the solvent, the resulting residue was purified by column chromatography (n-Hex:EA=10:1, Rf=0.78) to give 14.2 g (96% yield) of pure 3-chloropropyldimethylvinylsilane (2).

Workup

  1. additionwas slowly added at 0°
  2. customAfter the reaction
  3. extractionthe organic layer was extracted with aqueous NH4Cl solution and ether
  4. washthe organic layer was washed with aqueous saturated NaCl solution
  5. dry with materialThe washed organic solution was dried with anhydrous MgSO4
  6. filtrationfiltered through celite
  7. customto remove MgSO4
  8. customAfter evaporating the solvent
  9. customthe resulting residue was purified by column chromatography (n-Hex:EA=10:1, Rf=0.78)

Sources & evidence

ORD record
ord-3c60c145b3eb4100943d26a2597b63e4
Source dataset
uspto-grants-2012_06
DOI
10.6084/m9.figshare.5104873.v1
Patent number
US08197903B2

Reaction notes

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On this pageParticipantsProcedureWorkupSources & evidenceReaction notes