Hydrochloric Acid → HCID 57189850, compound

Reaction equation

[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])OC)([CH2:3][CH3:4])[CH3:2].[ClH:13]>>[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])[Cl:13])([CH2:3][CH3:4])[CH3:2]

Participants

Reactant 2

HCID 313Hydrochloric Acid

HCID 86597424HCID 86597424, compound

Product 1

HCID 57189850HCID 57189850, compoundYield 81%

Procedure

The resulting organic layer containing di-sec-butyl methylmethoxysilane was treated with 35% hydrochloric acid in the same manner as in Example 15(d). The organic layer was separated from the aqueous layer and was subjected to a fractional distillation under a reduced pressure to afford 32 g of di-sec-butylmethylchlorosilane as a fraction boiling at 78° C.-81° C./16 mm Hg (yield; 81%).

Workup

customThe organic layer was separated from the aqueous layer
distillationwas subjected to a fractional distillation under a reduced pressure

Sources & evidence

ORD record: ord-734b6295447a49efa5f4a9c080c52806
Source dataset: uspto-grants-2008_12
DOI: 10.6084/m9.figshare.5104873.v1
Patent number: US07459577B2

Reaction notes

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