Tris(2-methoxyethoxy)vinylsilane → Tetraethoxysilane

HRID 352642

Reaction equation

HRID 352642 reaction equation
[Si:1]([O:14][CH2:15][CH2:16]C)([O:10][CH2:11][CH2:12]C)([O:6][CH2:7][CH2:8]C)[O:2][CH2:3][CH2:4]C.[Si](OC(C)C)(OC(C)C)(OC(C)C)OC(C)C.[Si](OCCOC)(OCCOC)(OCCOC)OCCOC.C[Si](OC)(OC)OC.C=C[Si](OC)(OC)OC.C[Si](OCCOC)(OCCOC)OCCOC.ClC[Si](OCC)(OCC)OCC.C=C[Si](OCCOC)(OCCOC)OCCOC>>[Si:1]([O:6][CH2:7][CH3:8])([O:10][CH2:11][CH3:12])([O:14][CH2:15][CH3:16])[O:2][CH2:3][CH3:4]

Participants

9

Reactant 8

HCID 14025Tris(2-methoxyethoxy)vinylsilaneHCID 14456MethyltrimethoxysilaneHCID 69627TetrapropoxysilaneHCID 74813TetraisopropoxysilaneHCID 75087Tetra(methoxyethoxy)silaneHCID 76004VinyltrimethoxysilaneHCID 84858Silane, (chloromethyl)triethoxy-HCID 873922,5,7,10-Tetraoxa-6-silaundecane, 6-(2-methoxyethoxy)-6-methyl-

Product 1

HCID 6517Tetraethoxysilane

Procedure

Si(O-n-C3H7)4; Si(O—isoC3H7)4; Si(OC2H4OCH3)4; CH3Si(OCH3)3; CH2═CHSi(OCH3)3; CH3Si(OC2H4OCH3)3; ClCH2Si(OC2H5)3; CH2═CHSi(OC2H4OCH3)3.

Sources & evidence

ORD record
ord-6b41455068514db7bd1f8f6d1bbc4e5f
Source dataset
uspto-grants-2004_06
Patent number
US06747079B2

Linked notes

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