炭化ケイ素
カルボロン · シルンズム · 炭化けい素 · シリコンカーバイド · シルンデュム · カーボランダム · 炭化けい素(IV)(粉末) · 炭化けい素 #16
識別子と物理属性
| CAS No. | 409-21-2 |
|---|---|
| 分子式 | CSi |
| 平均分子量 | 40.096 g/mol |
| 単同位体質量 | 39.97692653 g/mol |
| SMILES | [C-]#[Si+] |
| InChIKey | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
| PubChem CID | 9863 |
| ChEBI | CHEBI:29390 |
| EC No. | 206-991-8 |
| DTXSID | DTXSID5052751 |
| 現地名 | 炭化ケイ素 |
化学・物理的性質
| 極性表面積 | 0 |
|---|---|
| 水素結合供与体数 | 0 |
| 水素結合受容体数 | 1 |
| 回転可能結合数 | 0 |
| 重原子数 | 2 |
| 形式電荷 | 0 |
| 複雑度 | 10 |
| 物質分類 | Mineral Dusts -> Other Mineral Dusts |
| SpringerMaterials Properties | valence band parameter |
| 密度 | 3.23 (NIOSH, 2024) - Denser than waterwill sink3.2 g/cm³3.16 @25 °C3.22 g/mL at 25 °C (lit.) |
| Color/Form | EXCEEDINGLY HARD, GREEN TO BLUISH-BLACK, IRIDESCENT, SHARP CRYSTALSHEXAGONAL OR CUBICYellow to green to bluish black, iridescent crystals. |
| 溶解度 | Insoluble (NIOSH, 2024)INSOL IN COLD WATER, HOT WATER, & ACIDSOL IN FUSED POTASSIUM HYDROXIDEINSOL IN ALCOHOLSOL IN MOLTEN IRONSolubility in water: none溶融水酸化ナトリウム、水酸化カリウム、溶融鉄に可溶。溶融アルカリ（NaOH、KOH）、溶融鉄に可溶。水に不溶。 |
| 沸点 | Sublimes (NIOSH, 2024) |
| 融点 | 4892 °F (Sublimes) (NIOSH, 2024)2600 °C4892 °F (sublimes)2830 °C2700 °C (lit.) |
| 蒸気圧 | 0 mmHg (approx) (NIOSH, 2024) |
| 屈折率 | INDEX OF REFRACTION: 2.6542.6972.6500 |
| Ionization Potential | 9.30 eV |
| Physical Description | Silicon carbide appears as yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700 °C. Density 3.21 g cm-3. Insoluble in water. Soluble in molten alkalis (NaOH, KOH) and molten iron.Dry PowderWet SolidCBILarge CrystalsOther SolidLiquidYellow to green to bluish-black, iridescent crystals[NIOSH]YELLOW-TO-GREEN-TO-BLUE-TO-BLACK CRYSTALS, DEPENDING ON PURITY.Yellow to green to bluish-black, iridescent crystals. |
| Other Experimental Properties | DIELECTRIC CONSTANT: 7.0HARDNESS: 9.5ELECTRON MOBILITY: GREATER THAN 100 SQ CM/VOLT-SECHOLE MOBILITY: GREATER THAN 20 SQ CM/VOLT-SECBAND GAP ENERGY: 2.8 ELECTRON-VOLTSSUBLIMES WITH DECOMPOSITION AT 2700 °CEXCELLENT THERMAL CONDUCTIVITYELECTRICALLY CONDUCTIVERESISTS OXIDATION AT HIGHER TEMPERATURES |
| 外観・状態 | ナノパウダー |
| 色 | 緑 |
| 比重 | 3.22 |
| 比熱容量 | Cp(crystal): 0.67 J/(g·K), at 25℃ |
| Merck | 14,8492 |
| 安定性 | 安定 |
| 化粧品成分の機能 | 研磨剤 |
| InChI | 1S/CSi/c1-2 |
| InChIKey | HBMJWWWQQXIZIP-UHFFFAOYSA-N |
| SMILES | [C-]#[Si+] |
| Modulus of Elasticity | 459 - 476 GPa |
| Knoop Microhardness | 3000, at 25°C |
| Poissons Ratio | 0.14, sintered |
| Shear Modulus | 180 GPa, Calculated |
| NISTの化学物質情報 | Silicon monocarbide(409-21-2) |
| EPAの化学物質情報 | Silicon carbide (409-21-2) |
化学的特性
シリコンカーバイドSiCは天然に存在する極めて稀な鉱物であるモアッサン石から初めて発見されましたSiCはシリコンと炭素の化合物でありその結晶構造はダイヤモンドに似ているため非常に硬く高い熱伝導性を持っていますこの特性によりシリコンカーバイドは研磨材や耐熱材としてまた半導体の部材としても用いられています
化学的特性
Silicon carbide is a yellow to green to bluishblack, iridescent crystalline substance. Colorless when pure.
化学性质
高温安定性，耐酸化性，半導体特性
安全性と法規制
| GHS 分類 | DangerH350i: May cause cancer by inhalation [Danger Carcinogenicity]P203, P280, P318, P405, and P501 (click each P-code to see the statement)This chemical does not meet GHS hazard criteria for 70.3% (740 of 1053) of all reports.H350i (16.6%): May cause cancer by inhalation [Danger Carcinogenicity] |
|---|---|
| 規制情報 | Chemical: Silicon carbide (SiC)Hazard Traits - CarcinogenicitySilicon carbide (SiC) is listed on the EPA's Chemical Data Reporting (CDR) system. Manufacturers and importers of Silicon carbide (SiC) are required to report information about their production and use of this chemical to the EPA under the Toxic Substances Control Act (TSCA). (40 eCFR Part 711)Status: Active Update: 08-05-2023 https://echa.europa.eu/registration-dossier/-/registered-dossier/15540Silicon carbide: Does not have an individual approval but may be used under an appropriate group standard |
| その他の安全情報 | IMAP assessments - Silicon carbide (SiC): Environment tier I assessment |
| 火災危険 | Not combustible. |
| 火災の可能性 | NONCOMBUSTIBLE |
| 健康有害性 | Excerpt from NIOSH Pocket Guide for Silicon carbide: |
| 有害性の概要 | Production workers loading and unloading furnaces are exposed to carbon monoxide, sulfur dioxide, crystalline silica, and fibrous and nonfibrous silicon carbide particles. [Rom, p. 534-5] Workers in production and manufacturing, e.g., abrasive products industry, are exposed to varying quantities of fibers (or whiskers) that have dimensions similar to amphibole asbestos fibers. Nonfibrous particles have low to very low toxic effects on lung tissue. Silicon carbide fibers, on the other hand, can cause lung fibrosis, lung cancer, and possibly mesothelioma. Silicon carbide fibers should be counted and controlled in the same manner as asbestos fibers. [ACGIH] Occupational exposures associated with the Acheson process are carcinogenic to humans (Group 1). Fibrous silicon carbide is possibly carcinogenic to humans (Group 2B). Silicon carbide whiskers are probably carcinogenic to humans (Group 2A). [IARC Vol. 111] See the agent, Acheson process, occupational exposure. |
| 反応性グループ | Nitrides, Phosphides, Carbides, and Silicides |
| EPA Safer Chemical |
用途
解説
純粋なものは無色の結晶。通常は褐色ないし黒色。きわめて硬く（硬度９以上），酸に侵されず，高温でも他と反応しにくい。ケイ砂とコークスとを約2000℃で反応させてつくる。炭化ケイ素は，ダイヤモンドに次ぐ硬さと高融点をもち，薬品に侵されにくく，熱，電気はややよく伝える。これらの特性のため，砥石材料，研磨材，化学工業用ライナ (被覆材) ，耐熱ライナ，電気炉の抵抗発熱体などにつくられる。原料は粉状なので，砥石では熱硬化性樹脂などで成形し，高温用には焼結成形する。
用途
ガラス研磨剤、研磨布、砥石、耐火レンガ
用途
おもに研削材で、トイシ、研摩布、ラップにも用い、特殊耐火物、化学反応容器や抵抗体、非直線性抵抗体として避雷器などに用いられ、高温でも使用できる整流器やトランジスターとしての用途も研究されている。
説明
Silicon carbide is a hard covalently bonded material predominantly produced by the carbothermal reduction of silica. Silicon carbide is made by heating silica sand and petroleum coke packed around electrodes in an electric resistance furnace to above 2200°C. Depending on the exact reaction conditions the resulting silicon carbide is either a fine powder or a bonded mass that requires crushing and milling to produce a usable feedstock. This material is very resistant to abrasion and to corrosion with a molten slag. It also has excellent resistance to thermal spalling. However as it is a carbide, it will oxidise readily, silicon carbide has a fairly high conductivity. Several hundred structures of silicon carbide (polytypes) have been identified which have different stacking arrangements for the silicon and carbon atoms. The simplest structure is a diamond structure which is designated /3-SiC. Other structures are either hexagonal or rhombic and are referred to as a-SiC.
使用
Silicon carbide is widely used as an abrasive in grinding and cutting glasses; in polishing glass and sharpening stones. It is used in the manufacture of porcelain, refractory brick, furnace linings, and emery paper. The compound also is used in semiconductor technology.
一般的な説明
Yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700°C. Density 3.21 g cm-3. Insoluble in water. Soluble in molten alkalis (NaOH, KOH) and molten iron.
使用用途
シリコンカーバイドの特徴として、高硬度、耐摩耗性、高熱伝導性、耐食性などが挙げられます。、シャフトなどの摺動部品だけでなく、分級機などの部品に加えて、高温試験機、金属溶融用のるつぼのような耐熱部品に利用可能です。 また、近年は電源の変換効率が従来の半導体より高いパワー半導体 (SiCパワー半導体) の材料として注目されています。SiCパワー半導体は、HEV (ハイブリッド車) にも使用されています。
製法・合成法
調製方法
Silicon carbide, also known by the trade name Carborundum, has been manufactured and used as an abrasive material for more than a century. It combines desirable properties of hardness and thermal resistance. It is produced by heating high-grade silica sand with finely ground carbon at 2400°C in an electric furnace. In its powdered or granular form, it has been used as the abrasive material in “paper and wheels.” It is used as an abrasive in sandblasting and engraving. It has been incorporated into ceramics and glass and especially into refractory ceramic materials.
調製方法
SiC was synthesized at the end of the 18th century with the name carborundum, and it was used as abrasive. In 1920 in Russia, O.V. Losev discovered two types of SiC from electro-luminescence and named them Type I and Type II. The electro-luminescence of Type I is greenish blue colored and that of Type II changes from orange to violet via yellow and green as the voltage increases from 6 to 28 V. The pure crystal is nominally obtained as 6H (a-II) SiC and the crystals with impurity are obtained as 15R and 4H. a-SiC (6H, 15R) is mainly synthesized using the sublimation method by heating the mixture of coke and silica sands at 2000℃ in the electrical furnace. SiC is segregated by cooling after melting Si in the carbon crucible.
製造方法
Silicon carbide is prepared by fusing a mixture of silica (sand) and carbon (coke) with some salt and saw dust in an electric arc furnace at 3000°C. SiO2(Sand)+3C(Coke)--(3000℃)--Sic+2CO Salt and saw dust is added to infuse air into the product so that it can be broken into pieces easily. The product obtained is first washed with strong acid followed by strong base to remove basic and acidic impurities respectively. Finally, it is washed with water.
合成方法
アチソン法（電気抵抗炉法）