Propionyl chloride → 2-Amino-4-methyl-3-oxo-butanoic acid benzyl ester hydrochloride salt
反応式
C[Si]([N-][Si](C)(C)C)(C)C.[Li+].[CH2:11]([O:18][C:19](=[O:35])[CH2:20][N:21]=C(C1C=CC=CC=1)C1C=CC=CC=1)[C:12]1[CH:17]=[CH:16][CH:15]=[CH:14][CH:13]=1.[C:36]([Cl:40])(=[O:39])[CH2:37][CH3:38]>O1CCCC1>[ClH:40].[CH2:11]([O:18][C:19](=[O:35])[CH:20]([NH2:21])[C:36](=[O:39])[CH2:37][CH3:38])[C:12]1[CH:13]=[CH:14][CH:15]=[CH:16][CH:17]=1参加物
実験手順
Lithium bis(trimethylsilyl)amide (1M in THF, 10.5 mL, 10.5 mmol) was added to N-(diphenylmethylene)glycine benzyl ester (3.28 g, 10 mmol) in tetrahydrofuran (10 mL) at −78° C. under argon. The reaction mixture was stirred at this temperature for about 1 hr. Propionyl chloride (0.913 mL, 10.5 mmol) in tetrahydrofuran (5 mL) was slowly added into the above mixture and stirred for 30 minutes. The reaction mixture was warmed up to room temperature and let stir overnight. After the completion of the above reaction, the reaction mixture was cooled to −40° C. quenched with 50 mL dilute hydrochloride acid (3N) and stirred at room temperature for 2 hr. After removal of tetrahydrofuran, the aqueous solution was extracted with ethyl acetate (3×50 mL), ether (1×50 mL) and CH2Cl2 (50 mL). The aqueous solution was concentrated in vacuo to about ½ volume and lyophilized to give 2-amino-4-methyl-3-oxo-butanoic acid benzyl ester hydrochloride salt, which was used in the next step without further purification.
後処理
- stirringstirred for 30 minutes
- stirringlet stir overnight
- customAfter the completion of the above reaction
- temperaturethe reaction mixture was cooled to −40° C.
- customquenched with 50 mL dilute hydrochloride acid (3N)
- stirringstirred at room temperature for 2 hr
- customAfter removal of tetrahydrofuran
- extractionthe aqueous solution was extracted with ethyl acetate (3×50 mL), ether (1×50 mL) and CH2Cl2 (50 mL)
- concentrationThe aqueous solution was concentrated in vacuo to about ½ volume
出典と根拠
- ORDレコード
- ord-986f484a377f4e2babc0228854c40046
- 出典データセット
- uspto-grants-2012_07
- 特許番号
- US08211914B2
反応ノート
読み込み中…