TIN OXIDE (SnO) → Indium oxide tin oxide samarium oxide

HRID 1628360

反応式

HRID 1628360 の反応式
[O-2:1].[In+3:2].[O-2].[O-2].[In+3].[Sn:6]=O.[O-2].[Sm+3:9].[O-2].[O-2].[Sm+3]>>[O-2:1].[In+3:2].[O-2:1].[O-2:1].[In+3:2].[Sn:6]=[O:1].[O-2:1].[Sm+3:9].[O-2:1].[O-2:1].[Sm+3:9]

参加物

4

反応物 3

HCID 88989TIN OXIDE (SnO)HCID 150905Indium oxideHCID 159425Samarium oxide (Sm2O3)

生成物 1

HCID 131731696Indium oxide tin oxide samarium oxide

実験手順

Except that a target containing indium oxide, tin oxide and samarium oxide (molar ratio of In:Sn:Sm=60:35:5) was used, indium oxide-tin oxide-samarium oxide (ITSmO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.

出典と根拠

ORDレコード
ord-81a39c1c4e824f9d9f495535bec906fa
出典データセット
uspto-grants-2014_07
特許番号
US08785920B2

関連ノート

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