Silicon carbide → Silicon Carbide Silicon Nitride
反応式
[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64>>[C-:1]#[Si+:2].[N:3]12[Si:8]34[N:9]5[Si:6]61[N:7]3[Si:4]25[N:5]64参加物
3
実験手順
The solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C. and held at this temperature for 1 min followed by heating at 1° C./min to 1415° C. and holding at this temperature for 1 hr and heating at 1° C./min to 1450° C. and holding for 1.5 hr. XRD analysis showed the formation of pure silicon carbide and silicon nitride nanoparticles/nanostructures, which are embedded in an excess amount of silicon. The silicon nitride nanoparticles/nanostructures were formed mainly on the exterior part or outer surface of the sample, which was exposed to the nitrogen. The silicon carbide nanoparticles/nanostructures were mainly formed on the interior portion of the sample.
後処理
- temperatureThe solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C.
- temperatureby heating at 1° C./min to 1415° C.
- waitholding at this temperature for 1 hr
- temperatureheating at 1° C./min to 1450° C.
- waitholding for 1.5 hr
出典と根拠
- ORDレコード
- ord-dd84094ab1b94b32b7ea0b4eb671237e
- 出典データセット
- uspto-grants-2015_06
- 特許番号
- US09045374B2
反応ノート
読み込み中…