Silicon carbide → Silicon Carbide Silicon Nitride

The solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C. and held at this temperature for 1 min followed by heating at 1° C./min to 1415° C. and holding at this temperature for 1 hr and heating at 1° C./min to 1450° C. and holding for 1.5 hr. XRD analysis showed the formation of pure silicon carbide and silicon nitride nanoparticles/nanostructures, which are embedded in an excess amount of silicon. The silicon nitride nanoparticles/nanostructures were formed mainly on the exterior part or outer surface of the sample, which was exposed to the nitrogen. The silicon carbide nanoparticles/nanostructures were mainly formed on the interior portion of the sample.

1. temperatureThe solid polymeric thermoset of Example 4 was heated under a flow (110 cc/min) of nitrogen at 3° C./min to 1200° C.
2. temperatureby heating at 1° C./min to 1415° C.
3. waitholding at this temperature for 1 hr
4. temperatureheating at 1° C./min to 1450° C.
5. waitholding for 1.5 hr

ORDレコード

ord-dd84094ab1b94b32b7ea0b4eb671237e

出典データセット

uspto-grants-2015_06

DOI

10.6084/m9.figshare.5104873.v1

特許番号

US09045374B2