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Tetrahydrofuran → 3-Chloropropylmethyldivinylsilane

HRID 217565
ノート
印刷プレビュー

反応式

HRID 217565 の反応式
[Cl:1][CH2:2][CH2:3][CH2:4][SiH2:5][CH:6](Cl)Cl.[CH:9]([Mg]Cl)=[CH2:10].[CH2:13]1COC[CH2:14]1>>[Cl:1][CH2:2][CH2:3][CH2:4][Si:5]([CH3:6])([CH:9]=[CH2:10])[CH:13]=[CH2:14]
参加物実験手順後処理出典と根拠反応ノート

参加物

4

反応物 3

HCID 8028TetrahydrofuranHCID 707000943-Chloropropyl dichloromethylsilaneHCID 178461836HCID 178461836、化合物

生成物 1

HCID 541650973-Chloropropylmethyldivinylsilane収率 91%

実験手順

The above-synthesized 3-chloropropyldichloromethylsilane (3) (9 g, 52.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (98 mL, 157 mmol) was then slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with NH4Cl aqueous solution and ether, and washed with saturated NaCl. The washed organic layer was dried with anhydrous MgSO4 and then filtered through celite to remove MgSO4. After evaporating the solvent, and the resulting residue was purified by column chromatography (n-Hexane, Rf=0.36) to give 8.3 g (91% yield) of pure 3-chloropropylmethyldivinylsilane (4).

後処理

  1. additionwas then slowly added at 0°
  2. customAfter the reaction
  3. extractionthe organic layer was extracted with NH4Cl aqueous solution and ether
  4. washwashed with saturated NaCl
  5. dry with materialThe washed organic layer was dried with anhydrous MgSO4
  6. filtrationfiltered through celite
  7. customto remove MgSO4
  8. customAfter evaporating the solvent
  9. customthe resulting residue was purified by column chromatography (n-Hexane, Rf=0.36)

出典と根拠

ORDレコード
ord-f0c72c307fcf4b5894ed67383c03633c
出典データセット
uspto-grants-2012_06
DOI
10.6084/m9.figshare.5104873.v1
特許番号
US08197903B2

反応ノート

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