Tetrahydrofuran → HCID 59255483、化合物

HRID 78161ノート

反応式

HRID 78161 の反応式
O1CCCC1.[CH3:6][C:7]1[CH:23]=[CH:22][C:10]([CH2:11][C:12]2[S:16][C:15]([CH2:17][C:18](Cl)=[N:19][OH:20])=[CH:14][CH:13]=2)=[CH:9][CH:8]=1.[C:24]([C:26]1[C:27]([NH2:33])=[N:28][C:29]([NH2:32])=[CH:30][CH:31]=1)#[CH:25].C(N(CC)CC)C>O>[CH3:6][C:7]1[CH:23]=[CH:22][C:10]([CH2:11][C:12]2[S:16][C:15]([CH2:17][C:18]3[CH:25]=[C:24]([C:26]4[C:27]([NH2:33])=[N:28][C:29]([NH2:32])=[CH:30][CH:31]=4)[O:20][N:19]=3)=[CH:14][CH:13]=2)=[CH:9][CH:8]=1

参加物

6

反応物 4

HCID 8028TetrahydrofuranHCID 8471TriethylamineHCID 552816763-Ethynylpyridine-2,6-diamineHCID 72262871(5-(4-Methyl-benzyl)-thiophen-2-yl)acetohydroximoyl chloride

生成物 1

HCID 59255483HCID 59255483、化合物収率 35.2%

試薬・触媒・溶媒 1

HCID 962Water溶媒

反応条件

温度
60 °C

実験手順

To a tetrahydrofuran (5.00 mL) solution of (5-(4-methyl-benzyl)-thiophen-2-yl)acetohydroximoyl chloride (250 mg, 0.894 mmol) described in Manufacturing Example 92-1-5 and 3-ethynyl-pyridin-2,6-diamine (50.0 mg, 0.376 mmol) described in Manufacturing Example 13-1-3 was added triethylamine (157 μL, 1.13 mmol) at room temperature, which was stirred for 30 minutes at 60° C. Water was added to the reaction solution at room temperature, which was extracted with ethyl acetate. The organic layer was washed with saturated aqueous sodium chloride and dried over anhydrous magnesium sulfate, and the solvent was evaporated under a reduced pressure. The residue was purified by NH silica gel column chromatography (ethyl acetate: heptane=2:1→3:1) to obtain the title compound (49.8 mg, 35.2%).

後処理

  1. extractionwhich was extracted with ethyl acetate
  2. washThe organic layer was washed with saturated aqueous sodium chloride
  3. dry with materialdried over anhydrous magnesium sulfate
  4. customthe solvent was evaporated under a reduced pressure
  5. customThe residue was purified by NH silica gel column chromatography (ethyl acetate: heptane=2:1→3:1)

出典と根拠

ORDレコード
ord-9f9b23254db44171a6c872383bfaaf49
出典データセット
uspto-grants-2014_09
特許番号
US08841327B2

反応ノート

読み込み中…