기본 정보
- CAS
3555-47-3- 표준 SMILES
C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)O[Si](C)(C)C- InChIKey
VNRWTCZXQWOWIG-UHFFFAOYSA-N- 분자식
- C12H36O4Si5
- 평균 분자량
- 384.84 g/mol
- 단동위원소 질량
- 384.1459923
이름 및 식별자
- 우선 이름
- Tetrakis(trimethylsiloxy)silane
- IUPAC
- tetrakis(trimethylsilyl) silicate
- 현지명
- 테트라키스(트리메틸실록시)실란
- 영어명
- Tetrakis(trimethylsiloxy)silane
- 분자식
- C12H36O4Si5
- 분자량
- 384.84
이름 및 동의어
3555-47-3TETRAKIS(TRIMETHYLSILOXY)SILANEtetrakis(trimethylsilyl) silicate55L9T9A11IUNII-55L9T9A11ITrisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis(trimethylsiloxy)-EINECS 222-613-4DTXSID9042463Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis((trimethylsilyl)oxy)-Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-SILICIC ACID, TETRAKIS(TRIMETHYLSILYL) ESTERSILICIC ACID (H4SIO4), TETRAKIS(TRIMETHYLSILYL) ESTER
이름 더 보기
테트라키스(트리메틸실록시)실란테트라키스(트리메틸실록시)실란(TETRAKIS(TRIMETHYLSILOXY)SILANE)TETRAKIS(TRIMETHYLSILYLOXY)SILANETrisiloxane,1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-DK275DK751loxy)DKFELEX0194Tetrakis(trimethylsietrakis(trimethylsilyl)silicate
SILANOL, TRIMETHYL-, TETRAESTER WITH SILICIC ACID (H4SIO4)RefChem:188748DTXCID70224631,1,1,5,5,5Hexamethyl3,3bis((trimethylsilyl)oxy)trisiloxaneTrisiloxane, 1,1,1,5,5,5hexamethyl3,3bis((trimethylsilyl)oxy)222-613-4VNRWTCZXQWOWIG-UHFFFAOYSA-NTetrakis(trimethylsilyl) orthosilicate
데이터베이스 식별자
- CAS
3555-47-3- PubChem CID
- 19086
- DTXSID
DTXSID9042463- UNII
- 55L9T9A11I
- EC Number
- 222-613-4
- Nikkaji
- J129.389C
물성
구조 계산 물성
- 극성 표면적
- 36.9 Ų
- 수소 결합 공여자 수
- 0
- 수소 결합 수용자 수
- 4
- 회전 가능 결합 수
- 8
- 무거운 원자 수
- 21
- 형식 전하
- 0
- 복잡도
- 266
실험 및 물리화학적 성질
Chemical ClassesMetals -> Metalloid Compounds (Silicon)
SpringerMaterials PropertiesBoiling point
Physical DescriptionColorless liquid; [Aldrich MSDS]
물리화학적 성질
- 녹는점
- -60 °C · -60 °C
- 끓는 점
- 103 · 103-106 °C/2 mmHg (lit.)
- 밀도
- 0.87 g/mL · 0.87 g/mL at 25 °C (lit.)
- 증기압
- 27.4 hPa · 27.4hPa at 20℃
- 굴절률
- 20 · n20/D 1.389(lit.)
- 인화점
- 169 °F · 169 °F
- 저장 조건
- Inert atmosphere,Room Temperature
- 물리적 상태
- 액체
- Specific Gravity
- 0.868 · 0.868
- 색상
- 무색 내지 거의 무색
- 수용성
- 150.7 ng/L · 150.7ng/L at 23℃
- BRN
- 1793898 · 1793898
- Henry's Law Constant
- 2.6 · 2.6×10-8 mol/(m3Pa) at 25℃, Ebert et al. (2023)
안전 및 규제
안전 정보는 참고용이며, 공급업체의 물질안전보건자료(SDS), 관련 법규 및 전문가 평가를 대체하지 않습니다.
GHS 분류
GHS Classification
This chemical does not meet GHS hazard criteria for 15.9% (63 of 397) of reports.
Warning
H315 (51.6%): Causes skin irritation [Warning Skin corrosion/irritation]
P261, P264, P264+P265, P271, P273, P280, P302+P352, P304+P340, P305+P351+P338, P319, P321, P332+P317, P337+P317, P362+P364, P403+P233, P405, and P501 (click each P-code to see the statement)
Aggregated GHS information provided per 397 reports by companies from 6 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.
유해성 정보
Regulatory Information
Chemical: Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-
Hazard Traits - Bioaccumulation; Environmental Persistence
REACH registered substance: 1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]trisiloxane (EC: 222-613-4)
Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis(trimethylsilyl)oxy-: Does not have an individual approval but may be used as a component in a product covered by a group standard. It is not approved for use as a chemical in its own right.
Other Safety InformationIMAP assessments - Trisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-: Human health tier I assessment
Hazards SummaryA skin and strong eye irritant; [Aldrich MSDS] See Octamethyltrisiloxane. See Dimethoxydimethylsilane.
Hazard Classes and CategoriesSkin Irrit. 2 (51.6%)
안전 데이터
- wgk
- 3
- tsca
- TSCA listed
- ridadr
- NA1993
- HS 번호
- 29319090
화학 및 산업
용도 및 제조
Household ProductsInformation on 2 consumer products that contain Tetrakis(Trimethylsiloxy) silane in the following categories is provided:
General Manufacturing InformationTrisiloxane, 1,1,1,5,5,5-hexamethyl-3,3-bis[(trimethylsilyl)oxy]-: ACTIVE
응용 분야
용도Tetrakis(trimethylsilyloxy)silane (TTMS) is an organosilicon compound used as a precursor to prepare nanostructured organosilicon polymer films by plasma-enhanced chemical vapor deposition (PECVD) at atmospheric pressure. TTMS along with cyclohexane can also be used to synthesize low dielectric constant SiCOH films by PECVD method.
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