15112-89-7CN(C)[SiH](N(C)C)N(C)CTWVSWDVJBJKDAA-UHFFFAOYSA-N15112-89-7DTXSID00884786안전 정보는 참고용이며, 공급업체의 물질안전보건자료(SDS), 관련 법규 및 전문가 평가를 대체하지 않습니다.
This chemical does not meet GHS hazard criteria for 5.8% (4 of 69) of reports.
Danger
H225 (56.5%): Highly Flammable liquid and vapor [Danger Flammable liquids]
P210, P223, P231+P232, P233, P240, P241, P242, P243, P260, P261, P262, P264, P270, P271, P280, P284, P301+P317, P301+P330+P331, P302+P335+P334, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P354+P338, P316, P320, P321, P330, P361+P364, P363, P370+P378, P402+P404, P403+P233, P403+P235, P405, and P501 (click each P-code to see the statement)
Aggregated GHS information provided per 69 reports by companies from 7 notifications to the ECHA C&L Inventory. Each notification may be associated with multiple companies.
용도Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.
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