Acetylene → 1-Ethyl-N,N,N',N',N'',N''-hexamethylsilanetriamine

HRID 637805

반응식

HRID 637805 반응식
[CH3:1][N:2]([SiH:4]([N:8]([CH3:10])[CH3:9])[N:5]([CH3:7])[CH3:6])[CH3:3].[CH:11]#[CH:12].[SiH4]>[H+].[H+].Cl[Pt-2](Cl)(Cl)(Cl)(Cl)Cl>[CH2:11]([Si:4]([N:8]([CH3:10])[CH3:9])([N:5]([CH3:7])[CH3:6])[N:2]([CH3:3])[CH3:1])[CH3:12]

참가 물질

5

반응물 3

HCID 6326Acetylene2회HCID 23953SilaneHCID 84795N,N,N',N',N'',N''-Hexamethylsilanetriamine

생성물 1

HCID 2072571-Ethyl-N,N,N',N',N'',N''-hexamethylsilanetriamine

시약·촉매·용매 1

HCID 61859Chloroplatinic acid촉매

반응 조건

온도
250 °C

실험 절차

A two liter stirred batch reactor was purged with nitrogen gas and thereafter charged with 840 g (5.22 moles) of tris(dimethylamino)silane and 5 ppm hexachloroplatinic acid. The reactor was then pressurized to approximately 5 psig with nitrogen gas and heated to approximately 250° C. The acetylene inlet feed was started and maintained at 100 psig. The reaction temperature was maintained at 250° C. After four hours the acetylene flow was stopped, the reaction mix cooled and the reaction products analyzed. Vinyltris(dimethyl)amino)silane was the single major product at 90% of theoretical. Ethyltris(dimethylamino)silane and 1,2-bis(trisdimethylamino)silylethane by-products were formed in amounts less than 0.5% each. Vinyltris(dimethylamino)silane polymer was also formed in an amount of 7-8%.

후처리

  1. customwas purged with nitrogen gas
  2. temperaturemaintained at 100 psig
  3. temperatureThe reaction temperature was maintained at 250° C
  4. additionthe reaction mix
  5. temperaturecooled

출처 및 근거

ORD 기록
ord-f19a773dbde64e59b5890b82eeed2fcc
출처 데이터셋
uspto-grants-1985_12
특허 번호
US04558146

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