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1,2-Ethanedithiol → HCID 12070526, 화합물

HRID 1059045
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HRID 1059045 반응식
CO[CH:3](OC)[CH:4]([CH3:13])[CH2:5][Si:6]([O:11][CH3:12])([O:9][CH3:10])[O:7][CH3:8].COC(OC)C(=C)C.CO[SiH](OC)OC.[CH2:31]([SH:34])[CH2:32][SH:33]>[Cl-].[Zn+2].[Cl-]>[CH3:13][CH:4]([CH:3]1[S:34][CH2:31][CH2:32][S:33]1)[CH2:5][Si:6]([O:11][CH3:12])([O:9][CH3:10])[O:7][CH3:8]
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

6

반응물 4

HCID 109021,2-EthanedithiolHCID 17215TrimethoxysilaneHCID 11182597methacrolein dimethyl acetalHCID 12070529HCID 12070529, 화합물

생성물 1

HCID 12070526HCID 12070526, 화합물

시약·촉매·용매 1

HCID 3007855Zincchloride촉매

실험 절차

이 페이지에서참가 물질실험 절차후처리출처 및 근거반응 노트

The procedure and apparatus of Example 1 were used with 25.0 g (0.102 m) of (3,3-dimethoxy-2-methylpropyl)trimethoxysilane (boiling point, 125°/25 mm, prepared by the hydrosilation of methacrolein dimethyl acetal with trimethoxysilane, as characterized by GC/MS and NMR), 9.6 g (0.102 m) of ethane-1,2-dithiol, and 0.07 g of anhydrous zinc chloride catalyst. The crude product, after distillation to a pot temperature of 195°, was 27.1 g, containing 64.3% of the title product as determined by GC/MS.

후처리

  1. custompoint, 125°/25 mm
  2. distillationThe crude product, after distillation to a pot temperature of 195°
  3. additioncontaining 64.3% of the title product

출처 및 근거

ORD 기록
ord-149a1f77fce64df89b4a4a86e2a7b372
출처 데이터셋
uspto-grants-2003_02
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06518335B2

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