Acetic Anhydride → HCID 12764994, 화합물

HRID 1530273노트

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HRID 1530273 반응식
[C:1]([Si:5]([CH3:11])([CH3:10])[O:6][CH2:7][C:8]#[CH:9])([CH3:4])([CH3:3])[CH3:2].[Li]CCCC.B(F)(F)F.[CH3:21][CH2:22][O:23]CC.C(OC(=O)C)(=O)C>C1COCC1>[Si:5]([O:6][CH2:7][C:8]#[C:9][C:22](=[O:23])[CH3:21])([C:1]([CH3:3])([CH3:4])[CH3:2])([CH3:10])[CH3:11]

참가 물질

6

반응물 4

HCID 7918Acetic AnhydrideHCID 8000Boron trifluoride etherateHCID 3445622tert-Butyl(dimethyl)[(prop-2-yn-1-yl)oxy]silaneHCID 178418339Butyllithium

생성물 1

HCID 12764994HCID 12764994, 화합물

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매

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온도
-78 °C

실험 절차

To a stirred solution of tert-butyldimethyl(prop-2-yn-1-yloxy)silane (20.0 g, 116.9 mmol) in THF (400 mL) at −78° C. was added n-BuLi (90 mL, 140.0 mmol) and the reaction mixture was allowed to attain room temperature with in 2 h. Then the reaction mixture was cooled to −78° C. and borontrifluoride etherate (18 mL, 140.0 mmol) was added. After 10 minutes stirring acetic anhydride (15 mL, 153.0 mmol) was added and the reaction mixture was allowed to attain room temperature with in 2.5 h. Reaction was quenched with aqueous 1N NaOH solution and extracted with ethyl acetate (3 times). Combined organic layer was dried over sodium sulphate. Removal of the solvent under reduced pressure followed by solvent washings afforded C (13 g, 52%).

후처리

  1. customto attain room temperature with in 2 h
  2. additionwas added
  3. customto attain room temperature with in 2.5 h
  4. customReaction
  5. customwas quenched with aqueous 1N NaOH solution
  6. extractionextracted with ethyl acetate (3 times)
  7. dry with materialCombined organic layer was dried over sodium sulphate
  8. customRemoval of the solvent under reduced pressure
  9. customafforded C (13 g, 52%)

출처 및 근거

ORD 기록
ord-bb31c39bd2694ee5a3bb70e3361d788f
출처 데이터셋
uspto-grants-2015_07
특허 번호
US09090562B2

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