Acetic Anhydride → HCID 12764994, 화합물

HRID 1616434노트

반응식

HRID 1616434 반응식
[C:1]([Si:5]([CH3:11])([CH3:10])[O:6][CH2:7][C:8]#[CH:9])([CH3:4])([CH3:3])[CH3:2].[Li]CCCC.B(F)(F)F.[CH3:21][CH2:22][O:23]CC.C(OC(=O)C)(=O)C>C1COCC1>[Si:5]([O:6][CH2:7][C:8]#[C:9][C:22](=[O:23])[CH3:21])([C:1]([CH3:3])([CH3:4])[CH3:2])([CH3:10])[CH3:11]

참가 물질

6

반응물 4

HCID 7918Acetic AnhydrideHCID 8000Boron trifluoride etherateHCID 3445622tert-Butyl(dimethyl)[(prop-2-yn-1-yl)oxy]silaneHCID 178418339Butyllithium

생성물 1

HCID 12764994HCID 12764994, 화합물

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매

반응 조건

온도
-78 °C

실험 절차

To a stirred solution of tert-butyldimethyl(prop-2-yn-1-yloxy)silane (20.0 g, 116.9 mmol) in THF (400 mL) at −78° C. was added n-BuLi (90 mL, 140.0 mmol) and the reaction mixture was allowed to attain room temperature with in 2 h. Then the reaction mixture was cooled to −78° C. and borontrifluoride etherate (18 mL, 140.0 mmol) was added. After 10 minutes stirring acetic anhydride (15 mL, 153.0 mmol) was added and the reaction mixture was allowed to attain room temperature with in 2.5 h. Reaction was quenched with aqueous 1N NaOH solution and extracted with ethyl acetate (3 times). Combined organic layer was dried over sodium sulphate. Removal of the solvent under reduced pressure followed by solvent washings afforded C (13 g, 52%).

후처리

  1. customto attain room temperature with in 2 h
  2. additionwas added
  3. customto attain room temperature with in 2.5 h
  4. customReaction
  5. customwas quenched with aqueous 1N NaOH solution
  6. extractionextracted with ethyl acetate (3 times)
  7. dry with materialCombined organic layer was dried over sodium sulphate
  8. customRemoval of the solvent under reduced pressure
  9. customafforded C (13 g, 52%)

출처 및 근거

ORD 기록
ord-8abb0d3d0ad242e79d29f578c1f2a153
출처 데이터셋
uspto-grants-2014_07
특허 번호
US08765732B2

반응 노트

불러오는 중…