반응식
[O-2:1].[In+3:2].[O-2].[O-2].[In+3].[Sn:6]=O.[O-2].[Zn+2:9]>>[O-2:1].[In+3:2].[O-2:1].[O-2:1].[In+3:2].[Sn:6]=[O:1].[O-2:1].[Zn+2:9]참가 물질
4
실험 절차
Except that a target containing indium oxide, tin oxide and zinc oxide (molar ratio of In:Sn:Zn=1:1:1) was used, indium oxide-tin oxide-zinc oxide (ITZO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.
출처 및 근거
- ORD 기록
- ord-9f62a2d2a543487ba361e59471e21403
- 출처 데이터셋
- uspto-grants-2014_07
- 특허 번호
- US08785920B2
연결된 노트
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