Hydrochloric Acid → HCID 57189850, 화합물

반응식

[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])OC)([CH2:3][CH3:4])[CH3:2].[ClH:13]>>[CH:1]([Si:5]([CH:9]([CH2:11][CH3:12])[CH3:10])([CH3:8])[Cl:13])([CH2:3][CH3:4])[CH3:2]

참가 물질

반응물 2

HCID 313Hydrochloric Acid

HCID 86597424HCID 86597424, 화합물

생성물 1

HCID 57189850HCID 57189850, 화합물수율 81%

실험 절차

The resulting organic layer containing di-sec-butyl methylmethoxysilane was treated with 35% hydrochloric acid in the same manner as in Example 15(d). The organic layer was separated from the aqueous layer and was subjected to a fractional distillation under a reduced pressure to afford 32 g of di-sec-butylmethylchlorosilane as a fraction boiling at 78° C.-81° C./16 mm Hg (yield; 81%).

후처리

customThe organic layer was separated from the aqueous layer
distillationwas subjected to a fractional distillation under a reduced pressure

출처 및 근거

ORD 기록: ord-18771054924043e09b683d40f8d4b0c4
출처 데이터셋: uspto-grants-2012_04
DOI: 10.6084/m9.figshare.5104873.v1
특허 번호: US08163950B2

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