TIN OXIDE (SnO) → Indium oxide tin oxide samarium oxide

HRID 1771005

반응식

HRID 1771005 반응식
[O-2:1].[In+3:2].[O-2].[O-2].[In+3].[Sn:6]=O.[O-2].[Sm+3:9].[O-2].[O-2].[Sm+3]>>[O-2:1].[In+3:2].[O-2:1].[O-2:1].[In+3:2].[Sn:6]=[O:1].[O-2:1].[Sm+3:9].[O-2:1].[O-2:1].[Sm+3:9]

참가 물질

4

반응물 3

HCID 88989TIN OXIDE (SnO)HCID 150905Indium oxideHCID 159425Samarium oxide (Sm2O3)

생성물 1

HCID 131731696Indium oxide tin oxide samarium oxide

실험 절차

Except that a target containing indium oxide, tin oxide and samarium oxide (molar ratio of In:Sn:Sm=60:35:5) was used, indium oxide-tin oxide-samarium oxide (ITSmO) thin films were formed in the same manner as in Example 1-1 and Comparative 1-1.

출처 및 근거

ORD 기록
ord-af2deb8a4e7543958bd9c0e0bbbb1d19
출처 데이터셋
uspto-grants-2016_02
특허 번호
US09249032B2

연결된 노트

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