Diiodomethane → Methyl 3-cyclopropyl-3-methylbutanoate

HRID 1859403노트

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HRID 1859403 반응식
[CH2:1]([Zn]CC)C.C(O)(C(F)(F)F)=O.ICI.[CH3:16][C:17]([CH3:25])([CH:23]=[CH2:24])[CH2:18][C:19]([O:21][CH3:22])=[O:20]>CCCCCC.ClCCl>[CH:23]1([C:17]([CH3:25])([CH3:16])[CH2:18][C:19]([O:21][CH3:22])=[O:20])[CH2:1][CH2:24]1

참가 물질

7

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온도
0 °C

실험 절차

To a solution of diethyl zinc (77 mL of a 1.0 M solution in hexane; 77 mmol) in dry dichloromethane (250 mL) at 0° C. under an inert atmosphere was added TFA (5.9 mL, 77 mmol) in dichloromethane (15 mL) dropwise over a period of 1 h. To this suspension was added diiodomethane (6.2 mL, 77 mmol) in dichloromethane (10 mL) dropwise over a period of 15 min. The resulting solution was stirred at 0° C. for 30 min, at which time methyl 3,3-dimethyl-4-pentenoate (5.0 g, 35 mmol) was added. The mixture was stirred at 0° C. for 30 min and then at ambient temperature for 16 h. The reaction was quenched by addition of saturated aqueous ammonium chloride (100 mL). The organic layer was separated and washed with water (100 mL), dried (MgSO4), filtered, and the solvents were removed under reduced pressure. The resulting liquid was distilled under reduced pressure. The fraction boiling at 76-80° C. (18 mm Hg) was collected to give methyl 3-cyclopropyl-3-methylbutanoate as a colorless liquid. 1H NMR 400 MHz, CDCl3, 3.66 ppm (s, 3H), 2.27 ppm (s, 2H), 0.87 ppm (s, 6H), 0.81 ppm (m, 1H), 0.31 ppm (m, 2H), 0.20 ppm (m, 2H)

후처리

  1. additionwas added
  2. waitat ambient temperature for 16 h
  3. customThe reaction was quenched by addition of saturated aqueous ammonium chloride (100 mL)
  4. customThe organic layer was separated
  5. washwashed with water (100 mL)
  6. dry with materialdried (MgSO4)
  7. filtrationfiltered
  8. customthe solvents were removed under reduced pressure
  9. distillationThe resulting liquid was distilled under reduced pressure
  10. customThe fraction boiling at 76-80° C. (18 mm Hg) was collected

출처 및 근거

ORD 기록
ord-0ccbc5196c0c427fb27136ca10fdd989
출처 데이터셋
uspto-grants-2003_03
특허 번호
US06528503B2

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