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Acetic Acid → HCID 68698458, 화합물

HRID 1990845
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HRID 1990845 반응식
[Br:1][C:2]1[CH:3]=[C:4]([CH:9]2[O:13][CH2:12][CH2:11][O:10]2)[CH:5]=[C:6](Br)[CH:7]=1.[Li]CCCC.B(OC)(OC)[O:20]C.C(O)(=O)C.OO.O>C1COCC1>[Br:1][C:2]1[CH:7]=[C:6]([OH:20])[CH:5]=[C:4]([CH:9]2[O:13][CH2:12][CH2:11][O:10]2)[CH:3]=1
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

8

반응물 6

HCID 176Acetic AcidHCID 784Hydrogen PeroxideHCID 962WaterHCID 8470Trimethyl borateHCID 11301269HCID 11301269, 화합물HCID 178418339Butyllithium

생성물 1

HCID 68698458HCID 68698458, 화합물

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매

실험 절차

To a solution of 2-(3,5-dibromo-phenyl)-[1,3]dioxolane (20.25 g, 65.75 mmol, 1.0 equiv) in anhydrous THF (200 mL) was added n-BuLi (45.2 mL, 72.33 mmol, 1.1 equiv, 1.6 M solution in hexane) at −78° C. under Ar. After stirring the reaction mixture for 30 min, trimethyl borate (7.33 mL, 6.83 g, 65.75 mmol, 1.0 equiv) was added rapidly and the reaction allowed to come to 0° C. over a time period of 4 h. A solution of conc. acetic acid (5.64 mL, 5.92 g, 98.63 mmol, 1.5 equiv) was slowly added followed by addition of a solution of 35% hydrogen peroxide in water (6.3 mL, 7.03 g, 72.33 mmol, 1.1 equiv) and the reaction mixture kept at 0° C. for 30 min. After stirring at rt for an additional 4 h, the reaction was extracted with ethyl actetate (3×200 mL), the combined organic phases washed with water, dried over MgSO4 and concentrated by evaporation under reduced pressure. The title compound was obtained in quantitative yield (16.1 g). MS (EI): 245.0 [M]+.

후처리

  1. customto come to 0° C. over a time period of 4 h
  2. waitthe reaction mixture kept at 0° C. for 30 min
  3. stirringAfter stirring at rt for an additional 4 h
  4. extractionthe reaction was extracted with ethyl actetate (3×200 mL)
  5. washthe combined organic phases washed with water
  6. dry with materialdried over MgSO4
  7. concentrationconcentrated by evaporation under reduced pressure

출처 및 근거

ORD 기록
ord-7bc93ff1c7bb47efb80f7fea177269d8
출처 데이터셋
uspto-grants-2010_01
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US07645753B2

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