1,2-Dichloroethane → HCID 178445681, 화합물

HRID 1992804노트

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HRID 1992804 반응식
[C:1]([C@@H:5]1[CH2:10][CH2:9][C@H:8]([NH:11][C:12]([C:14]2[N:18]([CH2:19][C:20]3[CH:28]=[CH:27][C:23]([C:24]([OH:26])=O)=[CH:22][N:21]=3)[N:17]=[C:16]([C:29]3[CH:34]=[CH:33][C:32]([Cl:35])=[C:31]([Cl:36])[CH:30]=3)[CH:15]=2)=[O:13])[CH2:7][CH2:6]1)([CH3:4])([CH3:3])[CH3:2].C1C=NC2N(O)N=NC=2C=1.[NH2:47][C:48]1[NH:52][N:51]=[N:50][N:49]=1.CCN(C(C)C)C(C)C.C(Cl)CCl>CN(C=O)C.C(OCC)(=O)C>[C:1]([C@@H:5]1[CH2:10][CH2:9][C@H:8]([NH:11][C:12]([C:14]2[N:18]([CH2:19][C:20]3[CH:28]=[CH:27][C:23]([C:24]([NH:47][C:48]4[NH:52][N:51]=[N:50][N:49]=4)=[O:26])=[CH:22][N:21]=3)[N:17]=[C:16]([C:29]3[CH:34]=[CH:33][C:32]([Cl:35])=[C:31]([Cl:36])[CH:30]=3)[CH:15]=2)=[O:13])[CH2:7][CH2:6]1)([CH3:2])([CH3:3])[CH3:4]

참가 물질

8

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온도
50 °C

실험 절차

To a solution of the intermediate from example 8 step H (65 mg, 0.122 mmol) in DMF (2 mL) was added HOAt (25 mg, 0.184 mmol), amino tetrazole(32 mg, 0.36 mmol), DIEA (64 μL, 0.37 mmol) and EDC (36 mg, 0.184 mmol). The reaction was stirred at 50° C. for 18 hours. The reaction was diluted with ethyl acetate and washed with 1N HCl and saturated NaCl solution. The organic layer was dried over anhydrous Na2SO4, filtered and concentrated in vacuo. The residue was purified on the Gilson reverse phase HPLC to give the title compound. 1H NMR (DMSO, 500 MHz): 9.12 (s, 1H), 8.4 (dd, J=2.0, 9.1 Hz, 2H), 8.18 (d, J=6.6 Hz, 1H), 8.03 (d, J=1.9 Hz, 1H), 7.83 (dd, J=1.9, 8.3 Hz, 1H), 7.73 (d, J=8.5 Hz, 1H), 7.53 (s, 1H), 7.24 (d, J=8.2 Hz, 1H), 7.24 (d, J=8.2 Hz, 1H), 5.91 (s, 2H), 3.96 (bm, 1H), 1.83 (d, J=12.3 Hz, 2H), 1.48 (m, 3H), 1.28 (m, 2H), 0.98 (m, 1H), 0.82 (s, 9H). LC-MS=2.71 min; (M+H)=596.2.

후처리

  1. washwashed with 1N HCl and saturated NaCl solution
  2. dry with materialThe organic layer was dried over anhydrous Na2SO4
  3. filtrationfiltered
  4. concentrationconcentrated in vacuo
  5. customThe residue was purified on the Gilson reverse phase HPLC

출처 및 근거

ORD 기록
ord-c48423cc519c4064827e18c79e77baac
출처 데이터셋
uspto-grants-2010_01
특허 번호
US07649009B2

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