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Hydrochloric Acid → Ethyl 2-(1-hydroxy-4-oxocyclohexa-2,5-dien-1-yl)acetate

HRID 2044798
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HRID 2044798 반응식
Br[Zn][CH2:3][C:4]([O:6][CH2:7][CH3:8])=[O:5].[C:9]1(=[O:16])[CH:14]=[CH:13][C:12](=[O:15])[CH:11]=[CH:10]1.Cl.C(OCC)(=O)C>C1COCC1>[OH:16][C:9]1([CH2:3][C:4]([O:6][CH2:7][CH3:8])=[O:5])[CH:14]=[CH:13][C:12](=[O:15])[CH:11]=[CH:10]1
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참가 물질

6

반응물 4

HCID 313Hydrochloric AcidHCID 4650QuinoneHCID 8857Ethyl AcetateHCID 178472539HCID 178472539, 화합물

생성물 1

HCID 100323Ethyl 2-(1-hydroxy-4-oxocyclohexa-2,5-dien-1-yl)acetate수율 70%

시약·촉매·용매 1

HCID 8028Tetrahydrofuran용매3회

실험 절차

Under nitrogen atmosphere, 6 mL of THF was added to 1.22 g (2 mmol, 0.6 equivalent) of (BrZnCH2COOEt.THF)2. Under argon atmosphere, a solution of 0.36 g (3.33 mmol) of p-benzoquinone in 2.5 mL of THF was added dropwise while stirring at 0˜5° C. The mixture was stirred at 20˜25° C. for 1 hour. 5 mL of 1N hydrochloric acid was added dropwise at 20° C. or lower, followed by dilution with 25 mL of ethyl acetate. Then, the layers were separated. The organic layer was washed successively with 5 mL (×2) of 1N hydrochloric acid, 5 mL of water, 5 mL (×2) of an aqueous saturated sodium bicarbonate solution, and 5 mL (×2) of an aqueous saturated sodium chloride solution. After washing, the organic layer was dried with anhydrous magnesium sulfate. After concentration under reduced pressure, purification with silica gel column (developing solvent; ethyl acetate/n-hexane=1/3, 1/2) afforded 0.46 g of the desired product (yield 70%).

후처리

  1. stirringThe mixture was stirred at 20˜25° C. for 1 hour
  2. customThen, the layers were separated
  3. washThe organic layer was washed successively with 5 mL (×2) of 1N hydrochloric acid, 5 mL of water, 5 mL (×2) of an aqueous saturated sodium bicarbonate solution, and 5 mL (×2) of an aqueous saturated sodium chloride solution
  4. washAfter washing
  5. dry with materialthe organic layer was dried with anhydrous magnesium sulfate
  6. concentrationAfter concentration
  7. customunder reduced pressure, purification with silica gel column (developing solvent; ethyl acetate/n-hexane=1/3, 1/2)

출처 및 근거

ORD 기록
ord-ccbbb1042b1642efad2ea30fae9052fb
출처 데이터셋
uspto-grants-2013_11
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08586762B2

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