Propanal → HCID 178459257, 화합물

HRID 2070080노트

반응식

HRID 2070080 반응식
[CH:1](=[O:4])[CH2:2][CH3:3].CC([Si](C)(C)O[C@H:11]1[CH2:16][CH2:15][C@H:14]([C:17]([O:19][CH2:20][CH3:21])=[O:18])[CH2:13][CH2:12]1)(C)C.[Bi](Br)(Br)Br.C([SiH](CC)CC)C>C(#N)C>[CH2:1]([O:4][C@H:11]1[CH2:16][CH2:15][C@H:14]([C:17]([O:19][CH2:20][CH3:21])=[O:18])[CH2:13][CH2:12]1)[CH2:2][CH3:3]

참가 물질

6

반응물 4

HCID 527PropanalHCID 12052TriethylsilaneHCID 82232bismuth(III) bromideHCID 178472501HCID 178472501, 화합물

생성물 1

HCID 178459257HCID 178459257, 화합물

시약·촉매·용매 1

HCID 6342Acetonitrile용매2회

실험 절차

Propionaldehyde (6.4 g) in acetonitrile (50 mL) was added over 30 minutes to a solution of cis/trans ethyl 4-{[(1,1-dimethylethyl)(dimethyl)silyl]oxy}cyclohexanecarboxylate (D1, 25.2 g), bismuth tribromide (4.4 g) and triethylsilane (17.5 mL) in acetonitrile (300 mL) and the mixture was stirred for a further 1.5 hours. The solvent was partially removed then the residue was treated with ethyl acetate and saturated sodium bicarbonate solution. The organic layer was separated, washed with brine, dried with anhydrous sodium sulphate and the solvent was removed to give the title compounds contaminated with silicone residues (39.1 g).

후처리

  1. customThe solvent was partially removed
  2. additionthe residue was treated with ethyl acetate and saturated sodium bicarbonate solution
  3. customThe organic layer was separated
  4. washwashed with brine
  5. dry with materialdried with anhydrous sodium sulphate
  6. customthe solvent was removed

출처 및 근거

ORD 기록
ord-0491cbd8d71b4926b659d12a7ea62be7
출처 데이터셋
uspto-grants-2012_10
특허 번호
US08299257B2

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