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Ethyl formate → HCID 15023229, 화합물

HRID 2081694
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HRID 2081694 반응식
[NH2:1][CH2:2][CH:3]1[C:12]2[C:7](=[CH:8][C:9]([O:13][CH3:14])=[CH:10][CH:11]=2)[O:6][CH2:5][CH2:4]1.[CH2:15](OC=O)C>C1(C)C=CC=CC=1>[CH3:15][NH:1][CH2:2][CH:3]1[C:12]2[C:7](=[CH:8][C:9]([O:13][CH3:14])=[CH:10][CH:11]=2)[O:6][CH2:5][CH2:4]1
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참가 물질

4

반응물 2

HCID 8025Ethyl formateHCID 15023228HCID 15023228, 화합물

생성물 1

HCID 15023229HCID 15023229, 화합물

시약·촉매·용매 1

HCID 1140Toluene용매

실험 절차

The product from Example 2 (5 g) was added to ethylformate (10 ml) and toluene (100 ml) then refluxed for 21/2 hrs. The solution was evaporated to dryness and then tetrahydrofuran (THF) (100 ml) and BH3.THF 25.9 ml of a IM THF solution) was added followed by heating for 11/2 hrs. The reaction was cooled and 6N HC1 (20 ml) was carefully added followed by heating for 1 hr. The THF was evaporated and the reaction made basic with aqueous KOH. The reaction was extracted with CH2Cl2, the organic layer then separated, dried (MgSO4), filtered and evaporated. The residue was chromatographed on silica gel and eluted with (EtOAc:H2O:HCO2H) (16:2:2), giving the product (1.4 g). Mass spec: (M+H)+ 208 1H NMR(CDCl3): 2.0 (m,2H); 2.49 (s,3H); 2.8 (m,2H); 3.75 (s,3H); 4.2 (m,1H); 6.38-7.25 (m,3H).

후처리

  1. temperaturethen refluxed for 21/2 hrs
  2. customThe solution was evaporated to dryness
  3. additiontetrahydrofuran (THF) (100 ml) and BH3.THF 25.9 ml of a IM THF solution) was added
  4. temperatureby heating for 11/2 hrs
  5. temperatureThe reaction was cooled
  6. addition6N HC1 (20 ml) was carefully added
  7. temperatureby heating for 1 hr
  8. customThe THF was evaporated
  9. extractionThe reaction was extracted with CH2Cl2
  10. customthe organic layer then separated
  11. dry with materialdried (MgSO4)
  12. filtrationfiltered
  13. customevaporated
  14. customThe residue was chromatographed on silica gel
  15. washeluted with (EtOAc:H2O:HCO2H) (16:2:2)

출처 및 근거

ORD 기록
ord-6682480fd09a45db9fa33b8d5646862b
출처 데이터셋
uspto-grants-1993_02
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US05185364

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