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Tetrahydrofuran → Chloropropyldimethylvinylsilane

HRID 217564
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HRID 217564 반응식
[Cl:1][CH2:2][CH2:3][CH2:4][Si:5](Cl)([CH3:7])C.C([Mg]Cl)=C.[CH2:13]1[CH2:17]OC[CH2:14]1>>[Cl:1][CH2:2][CH2:3][CH2:4][SiH2:5][CH:7]=[C:13]([CH3:17])[CH3:14]
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참가 물질

4

반응물 3

HCID 8028TetrahydrofuranHCID 82765Silane, chloro(3-chloropropyl)dimethyl-HCID 178461836HCID 178461836, 화합물

생성물 1

HCID 131715857Chloropropyldimethylvinylsilane수율 96%

실험 절차

The above-synthesized 3-chloropropylchlorodimethylsilane (1) (15.6 g, 91.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (85.6 mL, 137 mmol) was slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with aqueous NH4Cl solution and ether, and the organic layer was washed with aqueous saturated NaCl solution. The washed organic solution was dried with anhydrous MgSO4, and then filtered through celite to remove MgSO4. After evaporating the solvent, the resulting residue was purified by column chromatography (n-Hex:EA=10:1, Rf=0.78) to give 14.2 g (96% yield) of pure 3-chloropropyldimethylvinylsilane (2).

후처리

  1. additionwas slowly added at 0°
  2. customAfter the reaction
  3. extractionthe organic layer was extracted with aqueous NH4Cl solution and ether
  4. washthe organic layer was washed with aqueous saturated NaCl solution
  5. dry with materialThe washed organic solution was dried with anhydrous MgSO4
  6. filtrationfiltered through celite
  7. customto remove MgSO4
  8. customAfter evaporating the solvent
  9. customthe resulting residue was purified by column chromatography (n-Hex:EA=10:1, Rf=0.78)

출처 및 근거

ORD 기록
ord-3c60c145b3eb4100943d26a2597b63e4
출처 데이터셋
uspto-grants-2012_06
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08197903B2

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