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Tetrahydrofuran → 3-Chloropropylmethyldivinylsilane

HRID 217565
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HRID 217565 반응식
[Cl:1][CH2:2][CH2:3][CH2:4][SiH2:5][CH:6](Cl)Cl.[CH:9]([Mg]Cl)=[CH2:10].[CH2:13]1COC[CH2:14]1>>[Cl:1][CH2:2][CH2:3][CH2:4][Si:5]([CH3:6])([CH:9]=[CH2:10])[CH:13]=[CH2:14]
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참가 물질

4

반응물 3

HCID 8028TetrahydrofuranHCID 707000943-Chloropropyl dichloromethylsilaneHCID 178461836HCID 178461836, 화합물

생성물 1

HCID 541650973-Chloropropylmethyldivinylsilane수율 91%

실험 절차

The above-synthesized 3-chloropropyldichloromethylsilane (3) (9 g, 52.2 mmol) was dissolved in 50 mL of THF, to which 1.6 M vinylmagnesium chloride (98 mL, 157 mmol) was then slowly added at 0°, and the mixture was stirred for 2 hours. After the reaction, the organic layer was extracted with NH4Cl aqueous solution and ether, and washed with saturated NaCl. The washed organic layer was dried with anhydrous MgSO4 and then filtered through celite to remove MgSO4. After evaporating the solvent, and the resulting residue was purified by column chromatography (n-Hexane, Rf=0.36) to give 8.3 g (91% yield) of pure 3-chloropropylmethyldivinylsilane (4).

후처리

  1. additionwas then slowly added at 0°
  2. customAfter the reaction
  3. extractionthe organic layer was extracted with NH4Cl aqueous solution and ether
  4. washwashed with saturated NaCl
  5. dry with materialThe washed organic layer was dried with anhydrous MgSO4
  6. filtrationfiltered through celite
  7. customto remove MgSO4
  8. customAfter evaporating the solvent
  9. customthe resulting residue was purified by column chromatography (n-Hexane, Rf=0.36)

출처 및 근거

ORD 기록
ord-f0c72c307fcf4b5894ed67383c03633c
출처 데이터셋
uspto-grants-2012_06
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08197903B2

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