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Hydrochloric Acid → HCID 14281435, 화합물

HRID 2231886
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HRID 2231886 반응식
C([Li])CCC.[Si:6]([O:13][CH:14]([C:44]1[N:45]=[CH:46][O:47][CH:48]=1)[CH2:15][CH:16]([O:36][Si:37]([C:40]([CH3:43])([CH3:42])[CH3:41])([CH3:39])[CH3:38])[CH:17]([O:28][Si:29]([C:32]([CH3:35])([CH3:34])[CH3:33])([CH3:31])[CH3:30])[CH:18]([O:20][Si:21]([C:24]([CH3:27])([CH3:26])[CH3:25])([CH3:23])[CH3:22])[CH3:19])([C:9]([CH3:12])([CH3:11])[CH3:10])([CH3:8])[CH3:7].[CH:49]([C:51]1[O:55][CH:54]=[N:53][CH:52]=1)=[O:50].Cl>CCCCCC.C1COCC1.O>[O:55]1[C:51]([CH:49]([C:46]2[O:47][CH:48]=[C:44]([CH:14]([O:13][Si:6]([C:9]([CH3:10])([CH3:11])[CH3:12])([CH3:7])[CH3:8])[CH2:15][CH:16]([O:36][Si:37]([C:40]([CH3:43])([CH3:42])[CH3:41])([CH3:38])[CH3:39])[CH:17]([O:28][Si:29]([C:32]([CH3:33])([CH3:34])[CH3:35])([CH3:31])[CH3:30])[CH:18]([O:20][Si:21]([C:24]([CH3:26])([CH3:25])[CH3:27])([CH3:23])[CH3:22])[CH3:19])[N:45]=2)[OH:50])=[CH:52][N:53]=[CH:54]1
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8

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HCID 313Hydrochloric AcidHCID 118293725-OXAZOLECARBOXALDEHYDEHCID 14281434HCID 14281434, 화합물HCID 178418339Butyllithium

생성물 1

HCID 14281435HCID 14281435, 화합물

시약·촉매·용매 3

HCID 962Water용매
HCID 8028
Tetrahydrofuran
용매
2회
HCID 8058Hexane용매

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온도
-50 °C

실험 절차

Butyllithium (n-Buli, 0.32 g, 5 mmol) in hexane is added to a -50° C. Solution of 4-[1,3,4,5-tetra(t-butyldimethylsilyloxy)hexyl]oxazole (6, 3.4 g, 5 mmol) in THF (50 mL). The resulting solution stirred at -50° C. for three hours. A solution of 5-formyloxazole (0.53 g, 5.5 mmol - Preparation 20) in THF (7 mL) is added, and the mixture allowed to warm to room temperature while stirring for 12 hours. The resulting mixture is added to water, acidified with HCl and extracted three times with ether. The organic layer is washed with aqueous Na2SO3 and brine, dried over Na2SO4, and evaporated to yield 2-[1-(oxazol-5-yl)-1-hydroxymethyl]-4-[1,3,4,5-tetra(t-butyldimethylsilyloxy)hexyl]oxazole (7).

후처리

  1. temperatureto warm to room temperature
  2. stirringwhile stirring for 12 hours
  3. extractionextracted three times with ether
  4. washThe organic layer is washed with aqueous Na2SO3 and brine
  5. dry with materialdried over Na2SO4
  6. customevaporated

출처 및 근거

ORD 기록
ord-3fdd377b95fb4605b79b837648809c90
출처 데이터셋
uspto-grants-1988_11
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US04785012

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