Hydrochloric Acid → 2-(4-Acetyl-2-ethylphenylimino)-1-cyclopentyl-3-thia-1-azaspiro[4.4]nonane
반응식
[C:1]([C:4]1[CH:9]=[CH:8][C:7]([N:10]=[C:11]2[S:15][CH2:14][C:13]3([CH2:19][CH2:18][CH2:17][CH2:16]3)[N:12]2[CH:20]2[CH2:24][CH2:23][CH2:22][CH2:21]2)=[C:6]([CH2:25][CH3:26])[CH:5]=1)(O)=[O:2].C[Li].[CH3:29][Si](Cl)(C)C.Cl.C([O-])(O)=O.[Na+]>C1COCC1>[C:1]([C:4]1[CH:9]=[CH:8][C:7]([N:10]=[C:11]2[S:15][CH2:14][C:13]3([CH2:16][CH2:17][CH2:18][CH2:19]3)[N:12]2[CH:20]2[CH2:21][CH2:22][CH2:23][CH2:24]2)=[C:6]([CH2:25][CH3:26])[CH:5]=1)(=[O:2])[CH3:29]참가 물질
반응물 5
생성물 1
시약·촉매·용매 1
실험 절차
To a solution of the 2-(4-carboxy-2-ethylphenylimino)-1-cyclopentyl-3-thia-1-azaspiro[4.4]nonane (Method D9a; 0.046 g, 0.128 mmol) in THF (10 mL) at −78° C. was added methyllithium (1.4 M in Et2O, 0.91 mL, 1.28 mmol). The reaction mixture was while allowed to gradually warm to room temp., then was stirred overnight. Trimethylsilyl chloride (0.5 mL) was added and the mixture was stirred at room temp. for 2 h, then a 1N HCl solution (2 mL) was added. The mixture was stirred for 0.5 h, then was treated with a saturated NaHCO3 solution (10 mL). The resulting mixture was extracted with EtOAc (4×20 mL), and the combined organic layers were washed with a saturated NaCl solution (30 mL), dried (Na2SO4) and concentrated under reduced pressure. The residue was purified by preparative TLC (10% EtOAc/hex) to give 2-(4-acetyl-2-ethylphenylimino)-1-cyclopentyl-3-thia-1-azaspiro[4.4]nonane as a white solid (0.032 g, 73%): mp 114-115° C.
후처리
- temperatureto gradually warm to room temp.
- stirringthe mixture was stirred at room temp. for 2 h
- stirringThe mixture was stirred for 0.5 h
- extractionThe resulting mixture was extracted with EtOAc (4×20 mL)
- washthe combined organic layers were washed with a saturated NaCl solution (30 mL)
- dry with materialdried (Na2SO4)
- concentrationconcentrated under reduced pressure
- customThe residue was purified by preparative TLC (10% EtOAc/hex)
출처 및 근거
- ORD 기록
- ord-2229867fc5414608b20557f86f48978b
- 출처 데이터셋
- uspto-grants-2002_03
- 특허 번호
- US06353006B1
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