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Hydrochloric Acid → HCID 178427600, 화합물

HRID 322549
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HRID 322549 반응식
[S:1]1[CH:5]=[CH:4][N:3]=[CH:2]1.[Li]CCCC.[NH:11]([C:36]([O:38][C:39]([CH3:42])([CH3:41])[CH3:40])=[O:37])[C@H:12]([C:30](N(OC)C)=[O:31])[CH2:13][CH2:14][CH2:15][NH:16][C:17](=[NH:29])[NH:18][S:19]([C:22]1[CH:28]=[CH:27][C:25]([CH3:26])=[CH:24][CH:23]=1)(=[O:21])=[O:20].[Li]C1SC=CN=1.Cl.C1C[O:53]CC1>>[NH:11]([C:36]([O:38][C:39]([CH3:42])([CH3:40])[CH3:41])=[O:37])[C@H:12]([C:30]([OH:53])=[O:31])[CH2:13][CH2:14][CH2:15][NH:16][C:17](=[NH:29])[NH:18][S:19]([C:22]1[CH:28]=[CH:27][C:25]([CH3:26])=[CH:24][CH:23]=1)(=[O:20])=[O:21].[S:1]1[CH:5]=[CH:4][N:3]=[CH:2]1
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반응물 6

HCID 313Hydrochloric AcidHCID 8028Tetrahydrofuran2회HCID 9256ThiazoleHCID 178418339ButyllithiumHCID 178502742HCID 178502742, 화합물HCID 178506781HCID 178506781, 화합물

생성물 1

HCID 178427600
HCID 178427600, 화합물
수율 84%

실험 절차

To a solution of thiazole (2.5 g, 29 mmol) in THF (25 mL) at −78° C. was added n-BuLi (1.6 M in hexane, 19 mL) dropwise. The mixture was stirred for 30 min. Then a solution of Boc—Arg(Tos)—N(Me)OMe (1.7 g, 3.6 mmol) in THF(50 mL) was added to the lithiothiazole mixture at −78° C. The solution was stirred for 2 h. 1 M HCl (30 mL) was added to the reaction mixture and warmed to room temperature. The mixture was extracted with EtOAc (100 mL). The organic layer was washed with sat. NaCl (30 mL), dried over MgSO4, filtered and evaporated. The crude oily residue was purified by flash column over silica gel(50% EtOAc in CH2Cl2) to give Boc—Arg(Tos)—Thiazole (1.5 g, 84% yield) as a white powder. DCl—MS(M+H)+=496

후처리

  1. stirringThe solution was stirred for 2 h
  2. extractionThe mixture was extracted with EtOAc (100 mL)
  3. washThe organic layer was washed with sat. NaCl (30 mL)
  4. dry with materialdried over MgSO4
  5. filtrationfiltered
  6. customevaporated
  7. customThe crude oily residue was purified by flash column over silica gel(50% EtOAc in CH2Cl2)

출처 및 근거

ORD 기록
ord-8be0502e08ea4fc9a2cd0a35ef9c7306
출처 데이터셋
uspto-grants-2001_04
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US06211154B1

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