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Dimethyl Sulfone → HCID 86696142, 화합물

HRID 330770
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HRID 330770 반응식
C[Si]([N-][Si](C)(C)C)(C)C.[Na+].[Br:11][C:12]1[CH:17]=[CH:16][CH:15]=[C:14](F)[N:13]=1.[CH3:19][S:20]([CH3:23])(=[O:22])=[O:21].[CH2:24]1COC[CH2:25]1>>[Br:11][C:12]1[CH:17]=[CH:16][CH:15]=[C:14]([C:19]2([S:20]([CH3:23])(=[O:22])=[O:21])[CH2:25][CH2:24]2)[N:13]=1
참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

참가 물질

5

반응물 4

HCID 6213Dimethyl SulfoneHCID 8028TetrahydrofuranHCID 6394382-Bromo-6-fluoropyridineHCID 2724254Sodium bis(trimethylsilyl)amide

생성물 1

HCID 86696142HCID 86696142, 화합물

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온도
-17 °C

실험 절차

Under inert gas atmosphere 28.4 mL (56.8 mmol) of a sodium-bis-(trimethylsilyl)-amide solution in THF (c=2 mol/L) are chilled to −17° C. and dropwise charged with 2.00 g (11.3 mmol) 2-bromo-6-fluoropyridine. Afterwards 2.14 g (22.7 mmol) dimethyl sulfone are added and the reaction mixture is stirred at −17° C. for 1 h. The reaction is quenched by the addition of aq. sat.NaCl solution and extracted with EtOAc. The organic layer is dried over MgSO4, filtered and the solvent is removed in vacuo.

이 페이지에서참가 물질반응 조건실험 절차후처리출처 및 근거반응 노트

후처리

  1. customThe reaction is quenched by the addition
  2. extractionNaCl solution and extracted with EtOAc
  3. dry with materialThe organic layer is dried over MgSO4
  4. filtrationfiltered
  5. customthe solvent is removed in vacuo

출처 및 근거

ORD 기록
ord-84aa7a522d6045189b35bc87ee1144ae
출처 데이터셋
uspto-grants-2014_11
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08877741B2

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