Acetone → Methyldimethoxyisopropenoxysilane

HRID 355100

반응식

HRID 355100 반응식
C[SiH](OC)OC.CC(C)=O.CCCCCCCCCCCC.[H][H].C[Si](OC)(OC)OC.[CH3:33][Si:34]([O:41][CH3:42])([O:39][CH3:40])[O:35][CH:36]([CH3:38])[CH3:37]>[Cr].[Co]>[CH3:33][Si:34]([O:41][CH3:42])([O:39][CH3:40])[O:35][C:36]([CH3:38])=[CH2:37]

참가 물질

8

반응물 6

HCID 180AcetoneHCID 8182DodecaneHCID 14456MethyltrimethoxysilaneHCID 85623Methyldimethoxysilane2회HCID 18331962Silane, methyldimethoxyisopropoxy-HCID 178418361HCID 178418361, 화합물

생성물 1

HCID 13628365Methyldimethoxyisopropenoxysilane수율 62%

시약·촉매·용매 1

HCID 11332432Hastelloy C촉매

반응 조건

온도
130 °C

실험 절차

The 22 ml Hastelloy-C pressure reactor of Example 3 was charged with 0.056 g (0.12 mol) of Ni(SC12H25)2, 5.0 g (47.2 mmol) of methyldimethoxysilane, 5.0 g (86.2 mmol) of acetone, and 0.5 g of dodecane as internal standard. The mixture was warmed to 130° C. and maintained at that temperature for 0.5 hours. After cooling, and venting off the hydrogen gas formed during the course of the reaction, gc analysis showed the presence of 1.12 g (22%) of starting methyldimethoxysilane, 0.85 g (13%) of methyltrimethoxysilane, 1.27 g (17%) of methyldimethoxyisopropoxy silane, and 3.64 g or a 62% yield of methyldimethoxyisopropenoxysilane.

후처리

  1. temperaturemaintained at that temperature for 0.5 hours
  2. temperatureAfter cooling
  3. customformed during the course of the reaction, gc analysis

출처 및 근거

ORD 기록
ord-107bb443cfba4b2a8f7e352066b6bde6
출처 데이터셋
uspto-grants-1983_03
특허 번호
US04377706

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