Hydrochloric Acid → HCID 178527257, 화합물

HRID 378769

반응식

HRID 378769 반응식
C([O:3][Si:4](OCC)(OCC)[O:5]CC)C.C/C(/O)=C\C(C)=[O:18].C/C(/O)=C\C(C)=[O:25].[O:28]=[V:29].Cl>C(O)C>[O-2:3].[V+5:29].[O-2:18].[O-2:25].[O-2:28].[O-2:3].[V+5:29].[Si:4](=[O:5])=[O:3]

참가 물질

5

반응물 3

HCID 313Hydrochloric AcidHCID 6517TetraethoxysilaneHCID 16217092Bis(2,4-pentanedionato)vanadium(IV) Oxide

생성물 1

HCID 178527257HCID 178527257, 화합물

시약·촉매·용매 1

HCID 702Ethanol용매

반응 조건

온도
65 °C

실험 절차

10 ml of tetraethoxysilane (TEOS), 1.2 g of vanadyl acetyl-acetonate (O═V(AcAc)2) and 8 ml of ethanol are successively dissolved into one another, and 2 ml of 8 n HCl are added under stirring. Once the gel formation has been completed, the material is heated to 65° C. at a heating rate of 0.5° C./min, is maintained at 65° C. for 3 h, is heated to 250° C. at a heating rate of 0.2° C./min, and is calcinated at this temperature for another 3 h. The adsorption/desorption isotherms show that the material has a true monomodal distribution of the micropores; BET: 542 m2/g; pore diameter: 0.66 nm.

후처리

  1. additionare added
  2. temperatureis maintained at 65° C. for 3 h
  3. temperatureis heated to 250° C. at a heating rate of 0.2° C./min

출처 및 근거

ORD 기록
ord-cd319017c58742808dee6f8559ddd3b0
출처 데이터셋
uspto-grants-2001_10
특허 번호
US06297180B1

연결된 노트

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