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llms.txt · MCP 가이드개인정보처리방침 · 이용약관 · 지원v1.8.0
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1-Hexene → Decene-1 hexene-1

HRID 4186
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인쇄 미리보기

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HRID 4186 반응식
C[Si](N(P(=N[Si](C)(C)C)=N[Si](C)(C)C)[Si](C)(C)C)(C)C.[CH3:21][CH2:22][CH2:23][CH2:24][CH:25]=[CH2:26]>CCCCCCCCC=C>[CH3:26][CH2:25][CH2:24][CH2:23][CH2:22][CH2:21][CH2:24][CH2:23][CH:22]=[CH2:21].[CH3:26][CH2:25][CH2:24][CH2:23][CH:22]=[CH2:21]
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참가 물질

4

반응물 2

HCID 115971-HexeneHCID 54388992Bis(trimethylsilyl)amino-bis(trimethylsilylimino)phosphorane

생성물 1

HCID 20263375Decene-1 hexene-1

시약·촉매·용매 1

HCID 133811-Decene용매

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온도
0 °C

실험 절차

In a glass vessel pre-conditioned by heating under vacuum and filled with argon 0.34 g (1.24 mmol) of bis(cyclooctadiene-1,5)nickel and 0.46 g (1.25 mmol) of bis(trimethylsilyl)amino-bis(trimethylsilylimino)phosphorane were dissolved in 20 ml of decene-1, and the solution was stirred at 0° C. for 3 hours. Then to the gel-like mass there were added 20 ml of hexene-1, and the mixture was stirred at 0° C. for another 4 hours. After a working-up procedure as described in Example 1 there were obtained 24.0 g (85% of the total amount) of a decene-1/hexene-1 block copolymer which had a methyl branching point characteristic corresponding to the molar ratio of the α-olefin reactants (Mn =1 900).

후처리

  1. temperatureIn a glass vessel pre-conditioned by heating under vacuum
  2. stirringthe mixture was stirred at 0° C. for another 4 hours

출처 및 근거

ORD 기록
ord-8b39f025038f42bb9c0a692743fbf1b9
출처 데이터셋
uspto-grants-1988_02
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US04724273

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