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Dimethylformamide → HCID 178504192, 화합물

HRID 419726
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HRID 419726 반응식
[Cl:1][C:2]1[N:7]=[CH:6][N:5]=[C:4]2[NH:8][N:9]=[C:10](I)[C:3]=12.[CH3:12][Si:13]([CH3:17])([CH3:16])[C:14]#[CH:15].CN(C=O)C.C1COCC1>C(Cl)Cl.[Cu]I.C1C=CC([P]([Pd]([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)([P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)[P](C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)(C2C=CC=CC=2)C2C=CC=CC=2)=CC=1.CC(C)=O>[Cl:1][C:2]1[N:7]=[CH:6][N:5]=[C:4]2[NH:8][N:9]=[C:10]([C:15]#[C:14][Si:13]([CH3:17])([CH3:16])[CH3:12])[C:3]=12
참가 물질실험 절차후처리출처 및 근거반응 노트

참가 물질

9

반응물 4

HCID 6228DimethylformamideHCID 8028TetrahydrofuranHCID 66111TrimethylsilylacetyleneHCID 178478397HCID 178478397, 화합물

생성물 1

HCID 178504192HCID 178504192, 화합물수율 37.5%

시약·촉매·용매 4

HCID 24350Copper(1+) iodide; Copper(I) iodide; Cuprous iodide; Cuprous iodide (CuI)
촉매
HCID 178418397HCID 178418397, 화합물촉매
HCID 180Acetone용매
HCID 6344Dichloromethane용매

실험 절차

Charge 4-chloro-3-iodo-1H-pyrazolo[3,4-d]pyrimidine (5.4 g, 1.0 eq), trimethyl silyl acetylene (11.347 g, 6.0 eq), CuI (1.833 g, 0.5 eq), TEA (2.68 mL, 1.0 eq), DMF (67.5 mL), and THF (202.5 mL) in a round bottom flask under argon atmosphere. Stir the reaction mass under argon atm for 30 min. Charge (PPh3)4Pd (2.225 g, 0.1 eq) and stir the reaction mass at 35° C. for 3 h. Monitor the reaction by TLC (10% acetone in DCM). Concentrate the reaction mass under reduced pressure. Charge ethyl acetate and wash with saturated sodium bicarbonate solution, water and saturated aq. sodium chloride. Dry the organic layer over anhydrous sodium sulfate and concentrate the organic layer under reduced pressure. Purify the compound by column chromatography (silica 100-200 mesh, DCM-Acetone) to give desired product (1.81 g, 36.14%).

후처리

  1. concentrationConcentrate the reaction mass under reduced pressure
  2. washCharge ethyl acetate and wash with saturated sodium bicarbonate solution, water and saturated aq. sodium chloride
  3. dry with materialDry the organic layer over anhydrous sodium sulfate
  4. concentrationconcentrate the organic layer under reduced pressure
  5. customPurify the compound by column chromatography (silica 100-200 mesh, DCM-Acetone)

출처 및 근거

ORD 기록
ord-a65619109a904b64a102c571d1fccba0
출처 데이터셋
uspto-grants-2012_01
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08093383B2

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