Tetraethoxysilane → Tmos gaps

HRID 537661

반응식

HRID 537661 반응식
C[CH2:2][O:3][Si:4]([O:11][CH2:12]C)([O:8][CH2:9]C)[O:5][CH2:6]C.[NH2:14][CH2:15][CH2:16][CH2:17][Si:18]([O:25][CH2:26][CH3:27])([O:22][CH2:23][CH3:24])[O:19][CH2:20][CH3:21].CO[Si](OC)(OC)OC>O>[CH3:2][O:3][Si:4]([O:11][CH3:12])([O:8][CH3:9])[O:5][CH3:6].[NH2:14][CH2:15][CH2:16][CH2:17][Si:18]([O:25][CH2:26][CH3:27])([O:19][CH2:20][CH3:21])[O:22][CH2:23][CH3:24]

참가 물질

5

반응물 3

HCID 6517TetraethoxysilaneHCID 12682TetramethoxysilaneHCID 13521(3-Aminopropyl)triethoxysilane2회

생성물 1

HCID 87361843Tmos gaps

시약·촉매·용매 1

HCID 962Water용매

실험 절차

Substrate film casting procedure—HEC and TEOS and GAPS HEC (1.25 g) was completely dissolved in deionized water (250 mL) and stirred vigorously for about 16 hours to provide a 0.5 wt % solution. Then 0.875 mL tetramethylorthosilicate (TMOS) and 0.125 mL γ-aminopropyltriethoxysilane (GAPS) were added to the 50 g of the HEC solution with stirring to provide a 1:3.5:0.5 (w:v:v) HEC/TMOS/GAPS solution. After approximately 10 minutes, the combined HEC/silica solution was added to a well plate as above. The solution was allowed to evaporate at room temperature 16 hours with lid on, followed by 75° C. for 8 hours, until dry. The plates were sterilized by UV irradiation (1 hr @ 366 nm).

후처리

  1. customto provide a 0.5 wt % solution
  2. stirringwith stirring

출처 및 근거

ORD 기록
ord-206b58d8b030492aa0cd56c7f56830cb
출처 데이터셋
uspto-grants-2014_10
특허 번호
US08865465B2

연결된 노트

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