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Hexane → Stannane, 1,1'-thieno[3,2-b]thiophene-2,5-diylbis[1,1,1-trimethyl-

HRID 540965
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HRID 540965 반응식
[S:1]1[CH:5]=[CH:4][C:3]2[S:6][CH:7]=[CH:8][C:2]1=2.[Li]CCCC.CCCCCC.[CH3:20][Sn:21](Cl)([CH3:23])[CH3:22]>C1COCC1.C(Cl)(Cl)Cl.O>[CH3:20][Sn:21]([CH3:23])([CH3:22])[C:5]1[S:1][C:2]2[CH:8]=[C:7]([Sn:21]([CH3:23])([CH3:22])[CH3:20])[S:6][C:3]=2[CH:4]=1
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참가 물질

8

반응물 4

HCID 8058HexaneHCID 14016Trimethyltin chlorideHCID 136063Thieno(3,2-b)thiopheneHCID 178418339Butyllithium

생성물 1

HCID 12978043Stannane, 1,1'-thieno[3,2-b]thiophene-2,5-diylbis[1,1,1-trimethyl-수율 82%

시약·촉매·용매 3

HCID 962Water
용매
HCID 6212Chloroform용매
HCID 8028Tetrahydrofuran용매2회

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온도
-50 °C

실험 절차

To a solution of thieno[3,2-b]thiophene (1.2 g, 8.56 mmol) in 60 mL THF, 2.5 M solution of n-BuLi in hexane (7.25 mL, 18.0 mmol) was added dropwise at −50° C. under N2. The solution was stirred at −50° C. for 2 h and 1.0 M solution of trimethyltin chloride (18.9 mL, 18.8 mmol) in THF was added in one portion. After stirring at −50° C. for 2 h, the solution was warmed to room temperature and stirred for 24 h. The resulting mixture was poured into deionized water and 100 mL of CHCl3. The organic layer was washed twice with 50 mL of water and dried over anhydrous Na2SO4. The organic layer was evaporated and dried over vacuum to afford brown solid. The solid was then purified by recrystallization from Et2O to give colourless crystals (0.6 g, 82% yield). 1H NMR (CDCl3, 300 MHz, ppm): δ 7.26 (s, 2H), 0.48 (s, 18H).

후처리

  1. stirringAfter stirring at −50° C. for 2 h
  2. temperaturethe solution was warmed to room temperature
  3. stirringstirred for 24 h
  4. washThe organic layer was washed twice with 50 mL of water
  5. dry with materialdried over anhydrous Na2SO4
  6. customThe organic layer was evaporated
  7. customdried over vacuum
  8. customto afford brown solid
  9. customThe solid was then purified by recrystallization from Et2O

출처 및 근거

ORD 기록
ord-9e4193bfda5b409586e0f46d4443881e
출처 데이터셋
uspto-grants-2014_10
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08871884B2

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