Dimethyl Sulfoxide → HCID 86603851, 화합물

HRID 605470노트

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HRID 605470 반응식
[CH3:1][S:2]([CH3:4])=[O:3].[CH3:5][C:6](=[O:12])[CH2:7][CH2:8][CH2:9][CH2:10][CH3:11].C[Si](C)(OC(=O)C)OC(=O)C>C([O-])(=O)C.C[N+](C)(C)C.N#N>[CH3:5][C:6](=[O:12])[CH2:7][CH2:8][CH2:9][CH2:10][CH3:11].[CH3:1][S:2]([CH3:4])=[O:3]

참가 물질

6

반응물 3

HCID 679Dimethyl SulfoxideHCID 80512-HeptanoneHCID 75130Diacetoxydimethylsilane

생성물 1

HCID 86603851HCID 86603851, 화합물

시약·촉매·용매 2

HCID 82741Tetramethylammonium acetate촉매HCID 947Nitrogen용매

반응 조건

온도
125 °C

실험 절차

0.0126 g tetramethylammonium acetate (Aldrich Chemical Company, Milwaukee, Wis. 53201), were added to 1.247 g dimethylsulfoxide, the mix was stirred until dissolution, then 44.24 g of 2-heptanone (Ultra Pure Solutions Inc., Castroville, Calif. 85012), and 4.49 g of dimethyldiacetoxysilane (Gelest, Tullytone, Pa. 19007) were added in a 60 ml particle free high density polyethylene bottle. The solution was mixed vigorously for one minute. After mixing, the diluted precursor was hand filtered to 0.1 μm using a teflon filter. Approximately 2.0-3.0 ml of The formulation was deposited onto an 8″ etched (C4F8; 20 s.) & ashed (plasma O2; 20 s.) carbon depleted porous SiCOH film (˜4000 Å thick NANOGLASS-E®). After deposition, the wafer was spun at 2500 rpm for 30 seconds to form a film. The films were heated at elevated temperatures for 1 min. each at 125° C., 200° C. and 350° C. in N2. The following results were observed:

후처리

  1. additionThe solution was mixed vigorously for one minute
  2. additionAfter mixing
  3. filtrationfiltered to 0.1 μm
  4. filtrationfilter
  5. custometched (C4F8; 20 s.) & ashed (plasma O2; 20 s.) carbon depleted porous SiCOH film (˜4000 Å thick NANOGLASS-E®)
  6. customto form a film
  7. customThe following results

출처 및 근거

ORD 기록
ord-84b89b041cb9464eb15351cf3eff46f9
출처 데이터셋
uspto-grants-2011_03
특허 번호
US07915159B2

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