3-Chloro-1-butene → Chlorotriethylsilane

HRID 65510

반응식

HRID 65510 반응식
[SiH:1]([CH2:6][CH3:7])([CH2:4][CH3:5])[CH2:2][CH3:3].[Cl:8][CH:9]([CH3:12])[CH:10]=[CH2:11]>>[Si:1]([Cl:8])([CH2:6][CH3:7])([CH2:4][CH3:5])[CH2:2][CH3:3].[Si:1]([CH2:11][CH2:10][CH:9]([Cl:8])[CH3:12])([CH2:6][CH3:7])([CH2:4][CH3:5])[CH2:2][CH3:3]

참가 물질

4

반응물 2

HCID 112423-Chloro-1-buteneHCID 12052Triethylsilane

생성물 2

HCID 13819Chlorotriethylsilane수율 58.9%HCID 13765479Et3SiCH2CH2CHMeCl수율 7.6%

반응 조건

온도
77 °C

실험 절차

In a 50 ml apparatus, there were combined 4.5 g (0.039 mol) of Et3SiH and 3.5 g (0.039 mol) of 3-chloro-1-butene. Pt catalyst solution (0.01 ml) was added at 22° C., followed by heating up to 77° C. over 70 min. Vacuum distillation yielded 3.46 g (58.9%) of Et3SiCl and 0.61 g (7.6%) of Et3SiCH2CH2CHMeCl. This example demonstrates the low yield of Et3SiCH2CH2CHMeCl from the unpromoted reaction of Et3SiH with 3-chloro-1-butene.

후처리

  1. distillationVacuum distillation

출처 및 근거

ORD 기록
ord-45673193f8e042e78e06b4e60f4b1eb9
출처 데이터셋
uspto-grants-1986_09
특허 번호
US04614812

연결된 노트

불러오는 중…