Silicon tetrachloride → 9,9-Dichloro-9-silafluorene

HRID 842492노트

반응식

HRID 842492 반응식
[Li].Br[C:3]1(Br)[CH2:8][CH:7]=[CH:6][CH:5]=[C:4]1[C:9]1[CH:14]=[CH:13][CH:12]=[CH:11][CH:10]=1.[Si:16](Cl)(Cl)([Cl:18])[Cl:17]>CCCCC.CCOCC>[Cl:17][Si:16]1([Cl:18])[C:10]2[CH:11]=[CH:12][CH:13]=[CH:14][C:9]=2[C:4]2[C:3]1=[CH:8][CH:7]=[CH:6][CH:5]=2

참가 물질

6

반응물 3

HCID 24816Silicon tetrachlorideHCID 3028194LithiumHCID 569236692,2 Dibromo-1,1-biphenyl

생성물 1

HCID 6195839,9-Dichloro-9-silafluorene

시약·촉매·용매 2

HCID 3283Diethyl Ether용매3회HCID 8003Pentane용매

실험 절차

Lithium wire (3.33 g, 0.08 mol) was washed with pentane, carefully cut into small pieces, and suspended in 150 mL of Et2O. While stirring, 2,2-dibromobiphenyl (25 g, 0.08 mol) 100 mL of diethyl ether was added dropwise over 1 hour and the contents were allowed to stir for 10 hours. The mixture was filtered through a frit to remove any unreacted Li and LiBr. The filtrated was loaded into an addition funnel and slowly dropped into a solution containing SiCl4 (50 g, 0.08 mol) in 200 mL of Et2O. After addition, the contents were stirred at room temperature for 5 hours. The solvent was removed in vacuo and 300 mL of pentane was added. The solution was filtered to remove LiCl and the solvents were again removed in vacuo. The solids were then loaded into a sublimator and allowed to sublime at 150° C. under full vacuum. Yield was 10.0 g (51%).

후처리

  1. stirringto stir for 10 hours
  2. filtrationThe mixture was filtered through a frit
  3. customto remove any unreacted Li and LiBr
  4. customThe filtrated was loaded into an addition funnel
  5. additionslowly dropped into a solution
  6. additionAfter addition
  7. stirringthe contents were stirred at room temperature for 5 hours
  8. customThe solvent was removed in vacuo and 300 mL of pentane
  9. additionwas added
  10. filtrationThe solution was filtered
  11. customto remove LiCl
  12. customthe solvents were again removed in vacuo
  13. customto sublime at 150° C. under full vacuum

출처 및 근거

ORD 기록
ord-14d641e7b3d64276a6490ba22ce0af47
출처 데이터셋
uspto-grants-2002_04
특허 번호
US06376412B1

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