Hydrochloric Acid → 3,5-Dibromo-1-trimethylsilylbenzene

HRID 842531

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HRID 842531 반응식
[Br:1][C:2]1[C:3](Br)=[C:4]([Br:8])[CH:5]=[CH:6][CH:7]=1.[Li]CCCC.[CH3:15][Si:16](Cl)([CH3:18])[CH3:17].Cl>CCOCC>[Br:1][C:2]1[CH:7]=[C:6]([Si:16]([CH3:18])([CH3:17])[CH3:15])[CH:5]=[C:4]([Br:8])[CH:3]=1

참가 물질

6

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온도
-55 °C

실험 절차

42.4 g of Tribromobenzene (134.6 mmol) was dissolved in 600 mL Et2O. The solution was chilled to −55° C., at which temperature starting material precipitated. 54 mL of n-BuLi (2.5 M in hexanes, 135 mmol) were added within 20 minutes. After stirring for 35 minutes at −52° C., 20 ml TMSCl (158 mmol) and 20 mL Et2O were added within 7 minutes. The suspension turned into a solution at −42° C., and a fine precipitate appeared at −30° C. The suspension was stirred overnight at room temperature. 100 mL 2M HCl were used to hydrolyze the mixture. After stirring for 30 minutes, the Et2O-phase was dried with MgSO4, filtered, and solvent evaporated until compound crystallized out of solution. The flask was stored overnight at +4° C. The crystalline compound was filtered, washed with a small amount cold pentane, and dried under vacuo. A second fraction of crystalline compound was obtained from the filtrate. Yield: 31.9 g (103.5 mmol, 77%). 1H-NMR (CHCl3=7.24 ppm): δ7.62 (t, 1H), 7.49 (d, 2H), 0.25 (s, 3×3H).

후처리

  1. customprecipitated
  2. customturned into a solution at −42° C.
  3. customappeared at −30° C
  4. stirringThe suspension was stirred overnight at room temperature
  5. stirringAfter stirring for 30 minutes
  6. dry with materialthe Et2O-phase was dried with MgSO4
  7. filtrationfiltered
  8. customsolvent evaporated until compound
  9. customcrystallized out of solution
  10. waitThe flask was stored overnight at +4° C
  11. filtrationThe crystalline compound was filtered
  12. washwashed with a small amount cold pentane
  13. customdried under vacuo
  14. customA second fraction of crystalline compound was obtained from the filtrate

출처 및 근거

ORD 기록
ord-b45090bf3e4a47e3951611c038a6b36a
출처 데이터셋
uspto-grants-2002_04
특허 번호
US06376407B1

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