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Hydrochloric Acid → 2,2-Diphenylvinylboronic acid

HRID 871814
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HRID 871814 반응식
C([Li])CCC.[C:6]1([C:12]([C:15]2[CH:20]=[CH:19][CH:18]=[CH:17][CH:16]=2)=[CH:13]Br)[CH:11]=[CH:10][CH:9]=[CH:8][CH:7]=1.[B:21]([O-])([O-:27])[O:22]CCCC.Cl>CCCCCC.C1COCC1.O>[C:6]1([C:12]([C:15]2[CH:20]=[CH:19][CH:18]=[CH:17][CH:16]=2)=[CH:13][B:21]([OH:27])[OH:22])[CH:11]=[CH:10][CH:9]=[CH:8][CH:7]=1
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참가 물질

8

반응물 4

HCID 313Hydrochloric AcidHCID 2629142-Bromo-1,1-diphenylethyleneHCID 86592051n-ButylborateHCID 178418339Butyllithium

생성물 1

HCID 219091402,2-Diphenylvinylboronic acid

시약·촉매·용매 3

HCID 962Water용매
HCID 8028
Tetrahydrofuran
용매
HCID 8058Hexane용매

실험 절차

n-Butyllithium in hexane (2.5 M, 20 mL) was added slowly under nitrogen to a stirred solution of 2,2-diphenylvinyl bromide (6.50 g, 25.1 mmol) in THF (40 mL) at −78° C. and then the mixture was stirred further for 1 h. n-Butyl borate (15 mL, 55.5 mmol) was added at −78° C. before the mixture was warmed slowly to room temperature and stirred overnight. Water (50 mL) was added, followed by conc. HCl (100 mL) to acidify the mixture, which was then stirred for 3 h. The reaction mixture was extracted with EtOAc and the combined organic phases were dried over MgSO4. Concentration under reduced pressure gave 2,2-diphenylvinyl boronic acid, which, without further purification, was reacted with pinacol (4.25 g, 36.0 mmol) in toluene under reflux for 2 h to effect condensation by the azeotropic removal of the water formed. The mixture was concentrated under reduced pressure and the residue was purified by column chromatography (hexanes/CH2Cl2=1/1) to afford C (4.10 g, 53%) as transparent liquid.

후처리

  1. additionwas added at −78° C. before the mixture
  2. stirringwas then stirred for 3 h
  3. extractionThe reaction mixture was extracted with EtOAc
  4. dry with materialthe combined organic phases were dried over MgSO4
  5. concentrationConcentration under reduced pressure

출처 및 근거

ORD 기록
ord-a4f7297758e241e284d6ee720fcbb6d3
출처 데이터셋
uspto-grants-2015_03
DOI
10.6084/m9.figshare.5104873.v1
특허 번호
US08974920B2

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