반응식
[CH:1]([O:4][SiH:5]([O:10][CH:11]([CH3:13])[CH3:12])[O:6][CH:7]([CH3:9])[CH3:8])([CH3:3])[CH3:2].[CH:14]([Si:16]([O:25][CH:26]([CH3:28])[CH3:27])([O:21][CH:22]([CH3:24])[CH3:23])[O:17][CH:18]([CH3:20])[CH3:19])=[CH2:15]>C1(C)C(C)=CC=CC=1>[CH:7]([O:6][Si:5]([O:4][CH:1]([CH3:3])[CH3:2])([O:10][CH:11]([CH3:13])[CH3:12])[CH:15]=[CH:14][Si:16]([O:17][CH:18]([CH3:20])[CH3:19])([O:21][CH:22]([CH3:24])[CH3:23])[O:25][CH:26]([CH3:28])[CH3:27])([CH3:9])[CH3:8]참가 물질
4
반응 조건
- 온도
- 225 °C
실험 절차
Into a 45 cc Parr bomb was added 2.5 g (0.012 mol) triisopropoxysilane, 5.7 g (0.024 mol) vinyltriisopropoxysilane, 1.0 xylene and 200 ppm Ru3CO12 (20 mg). The reaction was heated for 4 hours at 225° C. in a fluidized sand bath. A single product, 1,2-bis(triisopropoxysilyl)ethylene was formed.
출처 및 근거
- ORD 기록
- ord-1cfea45e05b949b0bff2e9a9f1f49b20
- 출처 데이터셋
- uspto-grants-1987_05
- 특허 번호
- US04668812
연결된 노트
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