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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 1952703Generated: October 27, 2026

Copper → Cupric chromate(VI)

https://huagongshe.com/reaction/1952703

Reaction equation

Participants

RoleNameHCIDCharge
ReactantCopperHCID 23978—
ReactantChromateHCID 24461—
ReactantHCID 178526114HCID 178526114—
ProductCupric chromate(VI)HCID 61646—
ProductHCID 178505374HCID 178505374—

Reaction Steps

A passivating film 46 is then formed on top of the deposited copper layer 44 by depositing one of either a chromate or chromite on the deposited copper layer and forming a respective copper chromate or copper chromite composition. The passivating layer deposition could be formed by passing the wafer through a heating oven and depositing the chromite or chromate onto the deposited copper layer 44. It is also possible to use other techniques, even a wet technique. The semiconductor wafer and associated layers are then passed to a mechanical tool 48 for performing chemical mechanical polishing on the wafer 31. The wafer 31 is carried by wafer carrier 49 and placed face-down on a polishing pad 50 so that the wafer surface to be polished rests against the surface of the polishing pad 50. Various drive mechanisms 52 provide the rotation and movement of a wafer 31 relative to the polishing pad 50. The polishing pad can rotate in operation.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS06114234
Source datasetuspto-grants-2000_09
ORD IDord-424bd4d6313544a4ad8166710d14656a
Source noteuspto-grants-2000_09