Participants
| Role | Name | HCID | Charge |
|---|
| Reactant | Copper | HCID 23978 | — |
| Reactant | Chromate | HCID 24461 | — |
| Reactant | HCID 178526114 | HCID 178526114 | — |
| Product | Cupric chromate(VI) | HCID 61646 | — |
| Product | HCID 178505374 | HCID 178505374 | — |
Reaction Steps
A passivating film 46 is then formed on top of the deposited copper layer 44 by depositing one of either a chromate or chromite on the deposited copper layer and forming a respective copper chromate or copper chromite composition. The passivating layer deposition could be formed by passing the wafer through a heating oven and depositing the chromite or chromate onto the deposited copper layer 44. It is also possible to use other techniques, even a wet technique. The semiconductor wafer and associated layers are then passed to a mechanical tool 48 for performing chemical mechanical polishing on the wafer 31. The wafer 31 is carried by wafer carrier 49 and placed face-down on a polishing pad 50 so that the wafer surface to be polished rests against the surface of the polishing pad 50. Various drive mechanisms 52 provide the rotation and movement of a wafer 31 relative to the polishing pad 50. The polishing pad can rotate in operation.
Provenance & Evidence
| DOI | 10.6084/m9.figshare.5104873.v1 |
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| Patent number | US06114234 |
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| Source dataset | uspto-grants-2000_09 |
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| ORD ID | ord-424bd4d6313544a4ad8166710d14656a |
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| Source note | uspto-grants-2000_09 |
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