Tetraethoxysilane → HCID 131735194, compound

HRID 625159Notes

Reaction equation

[W:1].[CH3:2][CH2:3][O:4][Si:5]([O:12][CH2:13][CH3:14])([O:9][CH2:10][CH3:11])[O:6][CH2:7][CH3:8]>>[W:1].[CH3:8][CH2:7][O:6][Si:5]([O:4][CH2:3][CH3:2])([O:9][CH2:10][CH3:11])[O:12][CH2:13][CH3:14]

Participants

Reactant 2

HCID 6517Tetraethoxysilane

HCID 23964Tungsten

Product 1

HCID 131735194HCID 131735194, compound

Procedure

A ratio in which the polishing rate for tungsten was divided by the polishing rate for TEOS was calculated.

Sources & evidence

ORD record: ord-342ee713b6784e42a7e7385f7385dc4f
Source dataset: uspto-grants-2016_04
DOI: 10.6084/m9.figshare.5104873.v1
Patent number: US09303191B2

Reaction notes

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