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HuagongsheHuagongshe Chemistry Print Report · For research reference only
HRID 625159Generated: October 30, 2026

Tetraethoxysilane → HCID 131735194, compound

https://huagongshe.com/reaction/625159

Reaction equation

Participants

RoleNameHCIDCharge
ReactantTetraethoxysilaneHCID 6517—
ReactantTungstenHCID 23964—
ProductHCID 131735194HCID 131735194—

Reaction Steps

A ratio in which the polishing rate for tungsten was divided by the polishing rate for TEOS was calculated.

Provenance & Evidence

DOI10.6084/m9.figshare.5104873.v1
Patent numberUS09303191B2
Source datasetuspto-grants-2016_04
ORD IDord-342ee713b6784e42a7e7385f7385dc4f
Source noteuspto-grants-2016_04