Water → Trimethylsilylmethyl methacrylate tertiarybutyl methacrylate

HRID 341723

Reaktionsgleichung

Reaktionsgleichung von HRID 341723
[C:1]([O:6][CH2:7][Si:8]([CH3:11])([CH3:10])[CH3:9])(=[O:5])[C:2]([CH3:4])=[CH2:3].[C:12]([O:17][C:18]([CH3:21])([CH3:20])[CH3:19])(=[O:16])[C:13]([CH3:15])=[CH2:14].CC(N=NC(C#N)(C)C)(C#N)C.O>C1(C)C=CC=CC=1.CO>[C:1]([O:6][CH2:7][Si:8]([CH3:11])([CH3:9])[CH3:10])(=[O:5])[C:2]([CH3:4])=[CH2:3].[C:12]([O:17][C:18]([CH3:21])([CH3:20])[CH3:19])(=[O:16])[C:13]([CH3:15])=[CH2:14]

Komponenten

7

Edukt 4

HCID 962WaterHCID 6547AzobisisobutyronitrileHCID 11448tert-Butyl methacrylateHCID 2760855Methacryloxymethyltrimethylsilane

Produkt 1

HCID 86753511Trimethylsilylmethyl methacrylate tertiarybutyl methacrylateAusbeute 80 %

Reagenzien, Katalysatoren, Lösungsmittel 2

HCID 887MethanolLösungsmittelHCID 1140TolueneLösungsmittel2×

Versuchsvorschrift

Trimethylsilylmethyl methacrylate (TMSMMA) and tertiarybutyl methacrylate (TBMA) were mixed at a ratio of 1:1 so as to prepare a toluene solution having a monomer concentration of 5.0 mol/liter. Next, 2 mol %, on the basis of the monomer, of AIBN was added to the mixture, and the mixture was retained in an oil bath at 80° C. for 15 minutes. Next, the mixture was left standing to cool to room temperature. After the mixture was diluted with toluene, it was dropped into large quantities of a mixed solvent of water and methanol having a mixing ratio of 1:20, and the resulting precipitate was filtered and dried to obtain a base polymer of a resist material. There was thus obtained a trimethylsilylmethyl methacrylate/tertiarybutyl methacrylate copolymer represented by the following formula, ##STR12## wherein each of m and n is a positive integer. In this example, the copolymer described above could be obtained at a yield of 80%, the molecular weight was 38,000 and the dispersion was 1.70.

Aufarbeitung

  1. waitNext, the mixture was left
  2. filtrationthe resulting precipitate was filtered
  3. customdried
  4. customto obtain a base polymer of a resist material

Quellen und Nachweise

ORD-Eintrag
ord-77ca23db37004b9aa1a47099824914fa
Quelldatensatz
uspto-grants-1999_01
Patentnummer
US05856071

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