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Acetonitrile → HCID 22466766、化合物

HRID 1595749
ノート
印刷プレビュー

反応式

HRID 1595749 の反応式
[Li]CCCC.[CH3:6][C:7]#[N:8].CO[C:11](=[O:25])[C:12]1[CH:17]=[CH:16][CH:15]=[C:14]([O:18][CH3:19])[C:13]=1[N:20]=[CH:21]N(C)C>C1COCC1>[CH3:19][O:18][C:14]1[CH:15]=[CH:16][CH:17]=[C:12]2[C:13]=1[NH:20][CH:21]=[C:6]([C:7]#[N:8])[C:11]2=[O:25]
参加物反応条件実験手順後処理出典と根拠反応ノート

参加物

5

反応物 3

HCID 6342AcetonitrileHCID 545683112-(Dimethylamino-methyleneamino)-3-methoxy-benzoic acid methyl esterHCID 178418339Butyllithium

生成物 1

HCID 22466766HCID 22466766、化合物収率 77.5%

試薬・触媒・溶媒 1

HCID 8028Tetrahydrofuran溶媒3 回

反応条件

温度
-78 °C

実験手順

To 35.0 mL of THF was added 26.6 mL (66.4 mmol ) of n-BuLi solution during 5 min at −78° C. To the stirred solution was added a solution of 3.55 mL (67.9 mmol) of CH3CN in 65 mL of THF during 10 min which time the solution became white suspension, and then continued to stir for 15 min at −78° C. To the suspension was added a solution of 5.8 g (24.5 mmol) of 2-(Dimethylamino-methyleneamino)-3-methoxy-benzoic acid methyl ester in 45 mL of THF during 30 min, and then continued to stir 30 min at −78° C. during which time the mixture gradually became clear. The solution was quenched with 8.5 mL of HOAc. The resulting thick slurry was stirred and warmed to room temperature. After most of the solvent was evaporated, the residue was diluted with cold water. The separate solid was collected by filtration and washed with water. After drying in vacuo, this afforded 3.8 g of the product as an off white solid in 77.6% of yield, m.p. 270° C. (dec.), mass spectrum (electrospray, m/e): M+H 201.1

後処理

  1. stirringto stir 30 min at −78° C. during which time the mixture gradually became clear
  2. customThe solution was quenched with 8.5 mL of HOAc
  3. stirringThe resulting thick slurry was stirred
  4. temperaturewarmed to room temperature
  5. customAfter most of the solvent was evaporated
  6. additionthe residue was diluted with cold water
  7. filtrationThe separate solid was collected by filtration
  8. washwashed with water
  9. customAfter drying in vacuo

出典と根拠

ORDレコード
ord-eb1df3c7bf744c54b276ad71402980d1
出典データセット
uspto-grants-2001_09
DOI
10.6084/m9.figshare.5104873.v1
特許番号
US06288082B1

反応ノート

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