Chlorotrimethylsilane → HCID 15319840、化合物
反応式
[CH2:1]1[C:9]2[C:4](=[CH:5][CH:6]=[CH:7][CH:8]=2)[C:3]([C:10]([C:13]2[C:21]3[C:16](=[CH:17][CH:18]=[CH:19][CH:20]=3)[CH2:15][CH:14]=2)([CH3:12])[CH3:11])=[CH:2]1.C1COCC1.[Li]CCCC.[Si:32](Cl)([CH3:35])([CH3:34])[CH3:33]>CCCCCC.O>[CH3:33][Si:32]([CH3:35])([CH3:34])[CH:15]1[C:16]2[C:21](=[CH:20][CH:19]=[CH:18][CH:17]=2)[C:13]([C:10]([C:3]2[C:4]3[C:9](=[CH:8][CH:7]=[CH:6][CH:5]=3)[CH:1]([Si:32]([CH3:35])([CH3:34])[CH3:33])[CH:2]=2)([CH3:12])[CH3:11])=[CH:14]1参加物
実験手順
3.3 g of 2,2-bis(3-indenyl)propane (20511/46, MW 272.39, 12.11 mmol) and 50 m of THF in a 100 mL flask were cooled to -70° C. while stirring. 17 mL of a 1.6 M solution of BuLi (27.2 mmol) in hexane were added dropwise. At the end of the addition, the reaction mixture was allowed to warm to room temperature and stirred for 1 h. The solution was cooled again to -70° C. and 3.4 mL of Me3SiCl (MW 108.64, d 0.856, 26.8 mmol) were added. At the end of the addition, the reaction mixture was allowed to warm to room temperature and stirred for 2 h. Water is then added, the organic layer is separated and the water layer extracted twice with Et2O, all organic phases were combined and dried over MgSO4, then filtered and all volatiles removed in vacuo. 4.8 g (95%) of a mixture of rac/meso 2,2-bis(1-trimethylsilyl-3-indenyl)propane was obtained. 1H NMR (200 MHz, C2D2Cl4, 120° C., referenced to the peak of residual C2HDCl4 at 5.75 ppm): 7.1-7.3 (m, 4H, C6 ring), 6.75-6.95 (m, 4H, C6 ring), 6.3-6.4 (br s, 2H, C5 ring), 3.2-3.3 (m, 2H, C5 ring), 1.64, 1.62 (2 s, 6H, bridge methyls), -0.15, -0.17 (2 s, 18H, TMS methyls).
後処理
- additionAt the end of the addition
- stirringstirred for 1 h
- temperatureThe solution was cooled again to -70° C.
- additionAt the end of the addition
- temperatureto warm to room temperature
- stirringstirred for 2 h
- customthe organic layer is separated
- extractionthe water layer extracted twice with Et2O
- dry with materialdried over MgSO4
- filtrationfiltered
- customall volatiles removed in vacuo
出典と根拠
- ORDレコード
- ord-ab133960c4b34d1298b4af1518bb3088
- 出典データセット
- uspto-grants-1999_10
- 特許番号
- US05968863
反応ノート
読み込み中…