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Ammonia → (2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanal

HRID 1826566
ノート
印刷プレビュー

反応式

HRID 1826566 の反応式
[O:1]=[CH:2][C@@H:3]([C@H:5]([C@@H:7]([C@@H:9]([CH2:11][OH:12])[OH:10])[OH:8])[OH:6])[OH:4].S(O)(O)(=O)=O.[NH3:18].OP([O-])(O)=O.[K+].[NH2:25][C@H:26]([C:31]([OH:33])=[O:32])[C@H:27]([CH2:29][CH3:30])C.CC1[N+](CC2C=NC(C)=[N:45][C:46]=2[NH2:47])=CSC=1CCO.N>O>[NH2:25][C@H:26]([C:31]([OH:33])=[O:32])[CH2:27][CH2:29][CH2:30][NH:47][C:46](=[NH:45])[NH2:18].[O:1]=[CH:2][C@@H:3]([C@H:5]([C@@H:7]([C@@H:9]([CH2:11][OH:12])[OH:10])[OH:8])[OH:6])[OH:4]
参加物反応条件実験手順後処理出典と根拠反応ノート

参加物

9

反応物 6

HCID 222AmmoniaHCID 1130ThiamineHCID 6306L-IsoleucineHCID 107526(2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanalHCID 516951Monobasic potassium phosphateHCID 16211166Azane;sulfuric acid

生成物 2

HCID 107526
(2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanal
HCID 178418600HCID 178418600、化合物

試薬・触媒・溶媒 1

HCID 962Water溶媒

反応条件

温度
32 °C

実験手順

The novel strain 382 and its parent strain 237 were cultivated with shaking at 32° C. for 8 hours in L-broth. Then, 60 ml of the resulted seed culture were inoculated into 1 liter jar fermenter containing 0.5 L of the a fermentation media, followed by culturing with stirring at 700 rpm at 32° C. and aeration rate 0.5 liter/min. The fermentation medium contained 100 g glucose, 9 g ammonia sulfate, 1 g KH2PO4, 0.4 g MgSO4.7H2O 0.02 g FeSO4 .7H2O, 0.02 g MnSO4.7H2O, 0.2 g total nitrogen of Soybean hydrolysate, 0.3 g L-isoleucine, 0.4 mg thiamine in 1 liter of tap water (pH 7.0). During the cultivation, ammonia solution (4.7 M) was added to adjust pH to 7.0 and to supply a nitrogen source. The cultivation was carried out for 42 hours. The accumulated amount of arginine in the culture medium and the yield from glucose are shown in Table 3.

後処理

  1. additioncontaining 0.5 L of the a fermentation media
  2. stirringwith stirring at 700 rpm at 32° C.
  3. waitThe cultivation was carried out for 42 hours

出典と根拠

ORDレコード
ord-098ac963fe8847ca95c9e9aaf13cacda
出典データセット
uspto-grants-2006_05
DOI
10.6084/m9.figshare.5104873.v1
特許番号
US07052884B2

反応ノート

読み込み中…

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